Comparison of Different Processing Routes for the Synthesis of Semiconducting AlSb

Karati, Anirudha; Vaidya, M.; Murty, B.S.

doi:10.1007/s11665-018-3630-1

Cited by 8 publications

(2 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Owing to this, the synthesis of bulk AlSb has proven to be very difficult in the past. Mechanical alloying (MA) has been used in the past to synthesize the intermetallic compound, but not much success has been achieved in terms of obtaining a single phase [3][4][5][6][7][8]. This could be largely due to the reasons stated above.…”

Section: Introductionmentioning

confidence: 99%

“…On the other hand, casting is a very basic method, but it always has the possibility of oxidation of aluminum and sublimation of antimony particles. To avoid oxidation, Karati et al used the vacuum arc melting method to melt and synthesize the alloy, but the 50-50 at % composition showed an excess of aluminum [8]. So, after adding three at % excess of Sb to compensate for antimony sublimation, they succeeded in giving single-phase AlSb.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Mechanical and Thermoelectric Properties of Bulk AlSb Synthesized by Controlled Melting, Pulverizing and Subsequent Vacuum Hot Pressing

Shawon

2019

Applied Sciences

View full text Add to dashboard Cite

Aluminum antimonide is a semiconductor of the Group III-V order. With a wide indirect band gap, AlSb is one of the least discovered of this family of semiconductors. Bulk synthesis of AlSb has been reported on numerous occasions, but obtaining a single phase has always proven to be extremely difficult. This work reports a simple method for the synthesis of single-phase AlSb. Subsequently, consolidation was done into a near single-phase highly dense semiconductor in a form usable for thermoelectric applications. Further, the thermoelectric properties of this system are accounted for the first time. In addition, the mechanical properties of the intermetallic compound are briefly discussed for a possibility of further use.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Mechanical and Thermoelectric Properties of Bulk AlSb Synthesized by Controlled Melting, Pulverizing and Subsequent Vacuum Hot Pressing

Shawon

2019

Applied Sciences

View full text Add to dashboard Cite

show abstract

Effect of Processing Routes on the Microstructure and Thermoelectric Properties of Half-Heusler TiFe0.5Ni0.5Sb1−xSnx (x = 0, 0.05, 0.1, 0.2) Alloys

Karati

Ghosh

Mallik

et al. 2021

J. of Materi Eng and Perform

Self Cite

View full text Add to dashboard Cite

Sn-doped TiFe 0.5 Ni 0.5 Sb 12x Sn x (x = 0, 0.05, 0.1, 0.2) were synthesized by vacuum arc melting (VAM). In addition to the half-Heusler phase, secondary phases of Fe-Sb-rich compound and Ti-rich compounds were obtained after VAM. The alloys were then subjected to ball milling for 1 h and 5 h. Ball milling for 1h led to microcrystalline grains, while that for 5 h led to nanocrystalline grains. Ball milling followed by spark plasma sintering (SPS) at 1173 K led to significant reduction in size of secondary phases in the microstructure. The undoped sample exhibited a ZT of 0.008 at 873 K for both 1h and 5h BM-SPS samples.

show abstract

Influence of Al content on thermal stability of nanocrystalline AlxCoCrFeNi high entropy alloys at low and intermediate temperatures

Muralikrishna

Vaidya

Karati

et al. 2020

Advanced Powder Technology

View full text Add to dashboard Cite

Comparison of Different Processing Routes for the Synthesis of Semiconducting AlSb

Cited by 8 publications

References 30 publications

Mechanical and Thermoelectric Properties of Bulk AlSb Synthesized by Controlled Melting, Pulverizing and Subsequent Vacuum Hot Pressing

Mechanical and Thermoelectric Properties of Bulk AlSb Synthesized by Controlled Melting, Pulverizing and Subsequent Vacuum Hot Pressing

Effect of Processing Routes on the Microstructure and Thermoelectric Properties of Half-Heusler TiFe0.5Ni0.5Sb1−xSnx (x = 0, 0.05, 0.1, 0.2) Alloys

Influence of Al content on thermal stability of nanocrystalline AlxCoCrFeNi high entropy alloys at low and intermediate temperatures

Contact Info

Product

Resources

About