Molecular beam epitaxy of AlSb on GaAs and GaSb on AlSb films

Abstract

Single crystalline AlSb films are successfully grown, by MBE on GaAs substrates at temperatures higher t,han 400 "C. The surface gives a C(2 x 6) structure under Sb stabilized conditions. Undoped X1Sb is p-type with resistivities of lo2 t,o lo3 ncm. Then, GaSb films are grown on AISb/GaSs. It, can be seen, from RHEED observation that the interface between AlSb and GaSb is very smooth, and the layer growth continues a t the interface. Fabricating that structure improves the properties of GaSb in comparison with those of GaSb directly grown on GaAs by the relaxation of lattice mismatch.JIittels Molekularstrahlepitnxie (JIBE) werden einkristalline AISb-Schichten auf GaAs-Substrate erfolgreich bei Temperaturen oberhalb 400 "C aufgebracht. Die Oberfliiche ergibt eine C(2 X 6)-Struktur unter Sb-Stabilit5tsbedingiingen. Undotiertes AlSb ist p-leitend mit Leitfiihigkeiten von lo2 bis 103 ncm. AuBerdem werden GaSb-Schichten auf AISb/GaAs aufgebracht. Mittels RHEED-Messungen wird gezeigt, daB die AlSb-GaSb-Grenzflache sehr glatt ist und das Schichtwachstum an der Grenzflache kontinuierlich ist. Die Herst,ellung dieser Struktur verbessert die GaSb-Eigenschaften gegenuber direkt auf GaAs aufgebrachten GaSb-Schicht,en durch Relaxn.tion der Gitterfehlanpassung.

Relaxation dynamics and residual strain in metamorphic AlSb on GaAs

“…In fact, Gotoh et al have reported higher hole mobilities for GaSb grown on AlSb/GaAs than for GaSb grown directly on GaAs. 16 The AlSb layer, having a wider band gap than GaSb, should also act as a barrier for minority carrier recombination at the interface with the substrate.…”

Structural instability and photoacoustic study of AlSb prepared by mechanical alloying

“…where the constant a is the same defined for process (1). The PAS signal for processes (3) and (4) shows the same dependence on the modulation frequency.…”

“…Potentially it can be highly resistive and is closely lattice matched to GaSb and therefore has been used as semiinsulating substrate or buffer layer for the epitaxial growth of GaSb [1,2]. AlSb has an indirect band gap with an energy of 1.62 eV [3] and thus is a good candidate for applications such as high-energy photon detectors and as a barrier material to confine electrons in antimonide heterostructure devices [4], in InAs-channel high electron mobility transistors [5,6] and magnetoelectronic hybrid Hall effect devices [7].…”