Electron irradiation induced recombination centers in silicon-minority carrier lifetime control

Rai‐Choudhury, P.; Bartko, John J.; Johnson, J. E.

doi:10.1109/t-ed.1976.18491

Cited by 40 publications

(8 citation statements)

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“…4 10 e /cm dose using a 12-MeV linear accelerator; 4) measurement of the lifetime profile in the temperature range 100-450 K. In Figs. 2 and 3, the main results gained by means of the above procedure are reported.…”

Section: Resultsmentioning

confidence: 99%

“…In [3], the single negative status corresponding to was found to be dominant for the recombination process; in [4], the single positive status ( ) was proposed; in [5], both the oxygen-vacancy complex and divacancy were proposed while, more recently, it was found that both the single-and the double-negative ( ) divacancy are effective [11], [12]. Our results seem to disagree with all those cited, however, it has to be noted that when more centers are active in the same range of temperatures (i.e., when their energy levels are similar), our procedure identifies an equivalent energy level which can be regarded as a global effect taking into account the actual physical damage.…”

Section: Discussionmentioning

confidence: 99%

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Parametric description of the effect of electron irradiation on recombination lifetime in silicon layers: an experimental approach

Daliento

Sanseverino

Spirito

et al. 1999

IEEE Trans. Power Electron.

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The aim of this paper is to perform an experimental investigation on the effects of electron beam irradiation on the recombination lifetime of both p-type and n-type silicon layers in order to provide a set of parameters useful to model the recombination effects in semiconductor computer simulation package. To this goal, we propose to use a proper three-terminal test structure in order to extract these parameters directly from lifetime measurements along the silicon layers at different temperatures and at different injection levels by using the same silicon samples before and after the electron irradiation process in order to highlight the effects of the irradiation itself on the lifetime.The experimental results indicate that the electron irradiation is more effective for controlling the high-injection lifetime in ptype silicon than in an n-type one. The effect of the irradiation on lifetime can be basically taken into account by means of one energy level placed at 0.27 eV below the conduction band edge for both n-type and p-type material, with p = = = 10 n.

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Section: Resultsmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Parametric description of the effect of electron irradiation on recombination lifetime in silicon layers: an experimental approach

Daliento

Sanseverino

Spirito

et al. 1999

IEEE Trans. Power Electron.

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“…Proton and alpha irradiation are costly to perform as a vacuum environment is required for this technique. [16,17,18] The proposed technique This technique benefit power application designers by providing them with the flexibility of using power diodes with low conduction losses, and implement this technique to improve and 'fine-tune' the device reverse recovery characteristics. This combination can provide a near 'ideal' situation where an application can achieve both low switching and low conduction losses, concurrently.…”

Section: Theorymentioning

confidence: 99%

A novel technique to reduce the reverse recovery charge of a power diode

Shammas

Eio

2007

2007 European Conference on Power Electronics and Applications

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Power diodes are required to have short reverse recovery time, soft recovery, high breakdown voltage and a low forward voltage drop at the rated forward current. Manufactures introduce recombination centres in the device to achieve these parameters; however, a trade-off between the on-state losses and breakdown voltages, and a trade-off between the on-state losses and switching speeds is still significant.In this paper, a post manufacturing technique that reduces the reverse recovery charge of a power diode is proposed. The reverse recovery characteristic of the power diode was simulated by reconstructing a test circuit similar to the one previously published. To implement the technique, a current injection circuit, which injects an additional current from a pre-charged capacitor into the power diode prior to current zero, was added into the test circuit with results indicating a significant reduction in the power diode's reverse recovery charge. This 'helps' to cancel the reverse current due to the stored electronic charge in the wide drift region and therefore prevents the device from conducting large reverse current. Nevertheless, the technique requires precise timing for injecting the appropriate forward current pulse seeing that premature injection will increase the forward current, and belated injection will either lengthen the power diode's forward conduction period or switch the already turned off diode into its low impedance state. Two methods were developed to detect the falling anode current. The first method uses a digital signal processing (DSP) kit to predict the time where the falling anode current reaches zero based on its average gradient. The second method uses an analogue circuit to trigger the current injection circuit at a reference current level. Of the two methods, the DSP kit is limited by the processor's response time; and the analogue circuit is restricted by its inability of predicting current zero. Therefore, the limiting factor of this technique is the electronic delay in its components.

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“…Finally, some considerations on the practical aspects of the introduction of recombination centers in silicon allow to complete these conclusions : the three techniques involved are used on empirical basis ; nevertheless only the use of electron irradiation permits to control accurately the carrier lifetime values by a low temperature process, after device fabrication [11]. 4.…”

Section: Low Injection Level (âN 5~ ~ Nd Na) -mentioning

confidence: 99%

On the influence of recombination centers on the electrical performance of silicon power rectifiers

Derdouri

Muñoz‐Yagüe

1978

Rev. Phys. Appl. (Paris)

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Electron irradiation induced recombination centers in silicon-minority carrier lifetime control

Cited by 40 publications

References 0 publications

Parametric description of the effect of electron irradiation on recombination lifetime in silicon layers: an experimental approach

Parametric description of the effect of electron irradiation on recombination lifetime in silicon layers: an experimental approach

A novel technique to reduce the reverse recovery charge of a power diode

On the influence of recombination centers on the electrical performance of silicon power rectifiers

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