Physical processes in insulated-gate field-effect transistors

Johnson, J. E.

doi:10.1016/0038-1101(64)90064-4

Cited by 10 publications

(3 citation statements)

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“…Pinchoff will not occur when Vd is prevented in some way from influencing the channel carrier density so that the condition of Eq. [3] is not met. The common property suspected to be preventing ink-dielectric GAD's from approaching this condition is the strong frequency dependence of C~.…”

Section: ~O Ooo --_mentioning

confidence: 96%

“…The common property suspected to be preventing ink-dielectric GAD's from approaching this condition is the strong frequency dependence of C~. Equations [1] and [3] do not reveal how this dependency acts to p r e v e n t pinchoff because their derivation tacitly assumes no variation of Cg with frequency.…”

Section: ~O Ooo --_mentioning

confidence: 99%

“…However, two specially made units having Vo's of approximately 18v that should have been able to satisfy Eq. [3] for Vg --~ 0 were tested and found not to pinch off.…”

Section: ~O Ooo --_mentioning

confidence: 99%

See 2 more Smart Citations

Printable Insulated-Gate Field-Effect Transistors

Sihvonen¹,

Parker

Boyd

1967

J. Electrochem. Soc.

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Graphic means for fabricating active circuit elements have been examined in an exploratory program. Compatible and complementary semiconductor‐,dielectric‐, and metal‐inks have been developed and tested. Their use in various juxtaposed and overlayed configurations has produced operational insulated‐gate field‐effect transistors. The ultimate goal is to establish processes compatible with existing processes for silk‐screened resistors and capacitors and produce high‐volume, low‐cost active circuits. Four types of graphically produced transistors typically exhibit two characteristic modes of behavior; high transconductance false(≤2000µnormalmhosfalse) coupled with poor frequency response false(<100 normalcpsfalse) ; and low transconductance false(≤20µnormalmhosfalse) coupled with better frequency response false(>100 normalcpsfalse) . These behaviors correlate with gate‐dielectric parameters. Various organic and inorganic gate‐dielectric materials have been tested; best results to date have been obtained with nitrocellulose, silicate cement, glyceryl monostearate, or barium titanate in association with normalCdS:normalCdSe . Sintering of the semiconductor layer and postprocessing of the inks after each printing deposition have been found necessary to enhance device performance. The times involved with these operations are comparable to conventional screened conductor, resistor and capacitor processing periods.

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Section: ~O Ooo --_mentioning

confidence: 96%

Section: ~O Ooo --_mentioning

confidence: 99%