Relation between channel conductance and characteristics of thin-film transistors

Graaff, H.C. de

doi:10.1016/0038-1101(65)90081-x

Solid-State Electronics

1965

DOI: 10.1016/0038-1101(65)90081-x

|View full text |Cite

Relation between channel conductance and characteristics of thin-film transistors

H.C. de Graaff

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

1967

1969

Publication Types

Select...

Article2

Relationship

Self Cite0

Independent2

Authors

Journals

Cited by 2 publications

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

Evaporated silicon thin-film transistors

Salama

Young

1967

Solid-State Electronics

View full text Add to dashboard Cite

The method of fabrications the theory and the properties of evaporated silicon thin-film transistors are discussed. The device consists of a p-type silicon film (0.5 to 2 ytt-thick) on a sapphire substrate^ with aluminum source-drain electrodes evaporated onto the silicon and followed by a silicon oxide., SiO xS insulating layer and an aluminum gate. The device operates by field-effect conductivity modulation of an n-type inversion layer at the surface of the p-£ype film. The silicon films were evaporated by electron beam heating in a typical vacuum of 7 x 10"^ mm Hg at a rate of 200-600 l/min. The films exhibited single crystal diffraction patterns when deposited at a substrate temperature in the range 1050°C to 1100°C. They were found to be high resistivity (> 400 SI-cm) p-type and the 2 hole mobility was of the order 20-30 cm /volt-sec. The minority carrier lifetime was 1-2 /isec and the optical absorption edge of the films was found to be broader than the absorption edge of single crystal silicon at all substrate temperatures. The low carrier mobility and minority carrier lifetime as well as the broadening of the optical absorption edge are attributed to the presence of a lar;ge number of crystallographic defects in the films. The effective surface state density at the Si/evaporated SiO interface was estimated by the-MOS technique X and was found to be of the same order of magnitude (3-11-2 4 x 10 cm) as that at the Si/thermally grown Si02 interface. The silicon surface potential in the MOS structure was found to be particularly susceptible to water vapour and contamination by sodium. The silicon thin-film transistors fabricated have typical effective mobilities of 5-10 cm^/volt-sec with transconductances as high as 100 /unho and gain bandwidth products up to 1 MHz. Surface trapping was found to affect the behavior of the devices at low gate voltages. The characterization of the traps by a method which involves measurements of the source-drain conductance, its temperature dependence and its transient response is discussed. The effect of surface scattering on the mobility at high gate voltages is also considered. The device characteristics were stable in vacuum but drifted when exposed to the atmosphere.

show abstract

Evaporated silicon thin-film transistors

Salama

Young

1967

Solid-State Electronics

View full text Add to dashboard Cite

show abstract

Current Oscillation and Some Photoelectric Properties in High Resistivity Gallium Arsenide Produced by Irradiation of Fast Neutrons

Shirafuji

1969

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Current oscillation and some photoelectric properties in high resistivity n-type GaAs produced by fast neutron irradiation have been investigated. The spectral response in the photocurrent has a broad peak near the band edge and a relatively high photo-sensitivity still remains at wavelengths longer than the band edge. The photocurrent shows a drastic thermal quenching which begins at about 350°K. In as-irradiated and annealed samples current oscillations caused by traveling high field domain are observed. It is concluded that the current oscillation is due to the field-dependent trapping effect. The current oscillation at room temperature launches even in the dark, while at low temperatures it occurs only under illumination of light. The lower limit of n·l product necessary for leading to the oscillation is estimated as 5×108 cm-2. The oscillation characteristics, especially at low temperatures, are well understood by a simple model.

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Relation between channel conductance and characteristics of thin-film transistors

Cited by 2 publications

References 1 publication

Evaporated silicon thin-film transistors

Evaporated silicon thin-film transistors

Current Oscillation and Some Photoelectric Properties in High Resistivity Gallium Arsenide Produced by Irradiation of Fast Neutrons

Contact Info

Product

Resources

About