Printable Insulated-Gate Field-Effect Transistors

Sihvonen, Y. T.; Parker, Sidney G.; Boyd, Darren

doi:10.1149/1.2426517

Cited by 11 publications

(4 citation statements)

References 3 publications

(6 reference statements)

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“…The first efforts to print an electronic device backs to 1967, when Sihvonen et al322 inspired by the recent work reported by Weimer, has demonstrated the possibility to make an insulated gate field effect transistor (he call them Graphic Active Devices–GAD's ) with all the materials printed: semiconductor based on CdS:CdSe inks; dielectric based on silicate cements and electrodes based on a Hg:In paste‐like. Although these preliminary results were not spectacular (see Figure ), this work can be considered as a landmark in the printed electronics history.…”

Section: Recent Progress Of N‐type Oxide Tftsmentioning

confidence: 99%

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

2012

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Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.

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Section: Recent Progress Of N‐type Oxide Tftsmentioning

confidence: 99%

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

2012

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“…1,2 Advanced fabrication techniques and materials expand its application to low cost, large size, high resolution, and high-speed flat panel displays. 3 The greatest advancement was accompanied with the advent of a-Si:H as a semiconductor channel layer. 4 Although a-Si:H semiconductor exhibited lower electronic properties (carrier mobility ≤ 1 cm 2 /Vs) than TFTs based on polycrystalline channel layers (e.g.…”

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confidence: 99%

Printed Oxide Thin Film Transistors: A Mini Review

Choi

Lin

Cheng

et al. 2015

ECS J. Solid State Sci. Technol.

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Compared to conventional amorphous silicon (a-Si) TFTs, amorphous metal oxide TFTs have superior device performance such as higher mobility, better sub-threshold swing, and lower off-state current. Amorphous metal oxide TFTs have an additional advantage on the device uniformity due to the lack of grain boundary issues in the poly-Si TFTs. Compared with sputtered oxide TFTs, metal oxide TFTs with solution processes have better flexibility and controllability to adjust the composition of chemical solution. Among various solution-based approaches, direct printing is a promising low-cost technique in fabricating TFTs. The printing technique offers several advantages in manufacturing electronics such as a direct writing of materials, reduction of chemical waste, and reproducibility with high-resolution scale, which are not affordable from other solution-based approaches. While many printed OTFTs have been reported, relatively fewer studies, associated with printed metal oxide TFTs, have been pursued. Interests to printed metal oxide TFTs have grown continuously since the first report of a general route toward printed oxide TFTs. A variety of metal oxide materials have been reported as the channel layer of printed metal oxide TFTs. In this mini review paper, the development of printed metal oxide TFTs was discussed including the ink formulations, the types and characteristics of the applied printers, and fabricated thin film transistor characteristics. Lastly the review is concluded with a concise summary and future outlook from an industry perspective. Thin film transistors (TFTs), first reported by Lilienfeld and Heil almost nine decades ago, have continuously being developed and improved for low cost electronic switches.1,2 Advanced fabrication techniques and materials expand its application to low cost, large size, high resolution, and high-speed flat panel displays.3 The greatest advancement was accompanied with the advent of a-Si:H as a semiconductor channel layer.4 Although a-Si:H semiconductor exhibited lower electronic properties (carrier mobility ≤ 1 cm 2 /Vs) than TFTs based on polycrystalline channel layers (e.g. CdS), the electronic transport properties of a-Si:H were sufficient as switching elements in Liquid Crystal Displays, along with other benefits such as lower cost, high uniformity and excellent reproducibility in large area fabrication. However, lower performances of a-Si:H TFTs limit its application in AMOLED display. Metal oxide semiconductors have been intensively researched over the past decade due to their superior electrical properties including high carrier mobility (∼1-100 cm 2 /Vs), high optical transparency, good thermal/environmental durability, and potentially low-manufacturing cost.5,6 Significant progress of metal oxide TFTs has demonstrated the advantages over a-Si:H TFTs as next candidate for high-performance display applications. 7,8 In terms of manufacturing metal oxide semiconductors as the active channel layers in TFTs, gas-phase deposition technique that requires high vacuum f...

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“…[1,2,3] The advancement was accompanied with the advent of a-Si:H as a semiconductor channel layer. [4] Although a-Si:H semiconductor exhibited lower electronic properties (carrier mobility 1 cm 2 /Vs) than TFTs based on polycrystalline channel layers (e.g.…”

Section: Introductionmentioning

confidence: 99%