Conditions for the scanning e-beam activation of P and As implanted source and drain junctions in production NMOS Si gate devices have been established. MOS devices with e-beam annealed, As-implanted, source and drain regions have been produced. The transistor parameters are found to be close to those of furnace annealed control devices, but e-beam annealed devices exbibit a smaller short-channel effect.
The destruction of the oxygen donor complex in Czochralski silicon has been studied using scanning electron beam annealing in the range 550°C to 1050° C for 5s to 1000s. A two stage annealing schedule ensured a rapid rise to the target temperature and overscanning provided a uniform, non-distorting heating field. Four point probe and spreading resistance measurements showed a very rapid donor destruction rate above 650° C; between 550° C and 650°C the lower donor destruction rate allowed a study of the annealing behaviour.
The optimum e-beam anneal conditions for damage free wafer annealing, implant activation uniformity across 3 inch wafers and low dose boron activation have been investigated with reference to the needs of MOS device processing. Some effects of e-beam annealing on MOS gate dielectrics are reported.
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