Optimised Multi-Scan H-Beam Annealing Of Mos Devices

Pollard, Colin J.; Glaccum, A.E.; Speight, J D

doi:10.1557/proc-4-789

MRS Proc.

1981

DOI: 10.1557/proc-4-789

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Optimised Multi-Scan H-Beam Annealing Of Mos Devices

Colin J. Pollard

A.E. Glaccum

J D Speight

Abstract: The optimum e-beam anneal conditions for damage free wafer annealing, implant activation uniformity across 3 inch wafers and low dose boron activation have been investigated with reference to the needs of MOS device processing. Some effects of e-beam annealing on MOS gate dielectrics are reported.

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1983

1988

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Rapid thermal processing in semiconductor technology

Hart¹,

Evans²

1988

Semicond. Sci. Technol.

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We give a broad overview of some of the possible (and actual) applications of rapid thermal processing (RTP) techniques. Pioneering work done in the field of RTP is described, and a large number of references (about 90) are given. Because of the very wide range of possible applications the detail in which each is discussed may not be in direct relation to their importance for commercial or research purposes.The three main modes of RTP, the adiabatic, thermal flux and isothermal modes are described and contrasted in terms of heat flow, physical processes and suitability for various applications in the field of silicon semiconductor processing.The main types of equipment utilised for RTP research studies are briefly described, ranging from pulsed and cw laser and electron beam sources to radiant heat sources such as graphite plate and lamp systems.Three examples of the application of RTP to silicon semiconductor processing are described in some detail, with comparisons to conventional processing techniques made where relevant.The use of isothermal annealing systems for the acitivation of ion-implanted dopants is described and reviewed. The possible advantages of RTP are given, and the place of such technology in modern CMOS processing are briefly summarised.The formation of silicon-on-insulator structures using RTP techniques is described and compared with the competing technologies of oxygen implantation and porous silicon.Finally, the wide-ranging, new field of in situ multi-stage processing (or limited reaction processing) is briefly described, and possible applications discussed. This final section covers a subject in which much interest at the research level is presently focused.

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Rapid thermal processing in semiconductor technology

Hart¹,

Evans²

1988

Semicond. Sci. Technol.

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The Contribution of Beam Processing to Present and Future Integrated Circuit Technologies

Hill¹

1983

MRS Proc.

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A brief history and present state of beam processing techniques and applications to silicon integrated circuit technology are given. The viability of incorporating pulse-laser controlled doping profiles into the emitter-base structure of an advanced bipolar transistor is discussed. The areas of present I.C. technology which will constrain future device development are identified, and the contribution that beam processing can make in removing these constraints is discussed. The beam processing techniques most likely to be found in future I.C. technologies are described.

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Rapid Thermal Processing: A Bibliography

Powell

Manion

1985

MRS Proc.

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This bibliography presents 342 references to work published on rapid thermal processing (RTP) from 1979 through mid-1985. A variety of broad-beam energy sources are represented, including: arc and quartz-halogen lamps, blackbody radiators, strip heaters, broadly rastered electron beams, and defocused CO2 lasers. Citations were obtained by both manual searching and searching of a commercially available computerized data base (I NSPEC). Entries are grouped under 13 topical headings: reviews, implanted dopant activation and diffusion in silicon, polycrystalline silicon, silicides and polycides, metals, dielectrics, compound semiconductors, defects and microstructure, device applications (silicon and compound semiconductors), miscellaneous applications, equipment, and modeling. Within each group, citations are arranged alphabetically by title. A full author index is provided.

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Optimised Multi-Scan H-Beam Annealing Of Mos Devices

Cited by 3 publications

References 3 publications

Rapid thermal processing in semiconductor technology

Rapid thermal processing in semiconductor technology

The Contribution of Beam Processing to Present and Future Integrated Circuit Technologies

Rapid Thermal Processing: A Bibliography

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