High-efficiency proton-isolated GaAs IMPATT diodes

Speight, J D; Leigh, Philip; Mcintyre, N. S.; Groves, I.G.; Ohara, Shunji; Hemment, P.L.F.

doi:10.1049/el:19740076

Cited by 31 publications

(4 citation statements)

References 2 publications

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“…With the implant isolation technique, free carriers are compensated by either irradiation-induced damage or chemically related deep levels [2]. This compensation or carrier removal technique was first applied in the early 1970s [3] and is now used not only for GaAs ICs but also for a range of III-V device technologies [4]. A number of ion species, for example hydrogen, helium, boron, oxygen, fluorine, argon, neon etc, have been used for this purpose [5].…”

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confidence: 99%

Proton implantation for isolation of n-type GaAs layers at different substrate temperatures

Ahmed

Gwilliam

Sealy

2001

Semicond. Sci. Technol.

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The effects of dynamic annealing of damage-induced defects during implantation at elevated temperatures have been investigated in proton-isolated n-type GaAs layers. The results were compared with those obtained at nominal room temperature. The n-type material was prepared using multi-energy implants of 29 Si + ions. The isolation implants were performed using 3 × 10 14 cm −2 , 500 keV H + 2 ions at temperatures of either RT, 100 or 200 • C. After implantation, samples were annealed in order to investigate the evolution of sheet resistivity. Maximum resistivity values were achieved after annealing at 350 • C for RT and elevated-temperature implants. Annealing at higher temperatures returned the resistivity to a value close to that of the starting material and this recovery of conductivity was fastest in the case of RT implants. It is thought that the different thermal stability of defects generates different trap structures that may lead to different behaviour in the evolution of sheet resistivity for samples implanted at 100 or 200 • C.

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confidence: 99%

Proton implantation for isolation of n-type GaAs layers at different substrate temperatures

Ahmed

Gwilliam

Sealy

2001

Semicond. Sci. Technol.

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“…Most commonly, protons, boron and oxygen ions are used for implant isolation purposes [2]. This compensation or carrier removal technique was first applied in the early 1970s [3] and is now used not only for GaAs ICs but also for HEMTs, HBTs, lasers, LEDs and to delineate waveguides and optical cavities for lasers and LEDs [4].…”

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confidence: 99%

The effect of substrate temperature on the isolation of n-type GaAs layers using MeV boron implantation

Ahmed

Knights

Gwilliam

et al. 2001

Semicond. Sci. Technol.

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The evolution of sheet resistivity (R s ) with annealing temperature in n-type GaAs layers irradiated with 11 B + at different target temperatures has been investigated. The n-type material was prepared using multi-energy implants of 29 Si + ions. An isolation region was formed using boron ions at single energy of 1.5 MeV with doses of 2 × 10 14 cm −2 into samples held at RT, 100 and 200 • C. Sample resistivity was measured at room temperature both before and after annealing in the temperature range 350-800 • C. Maximum resistivity values were achieved after annealing at 500 • C for all three sets of samples. Annealing at higher temperatures returned the resistivity to a value close to that of the starting material and this recovery of conductivity was fastest in case of RT implants. Formation of thermally stable defects at high target temperatures was thought to be responsible for the different evolution trend of sheet resistivity with annealing temperature in samples irradiated at 100 and 200 • C compared to those irradiated at RT.

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“…This technique has previously been used in wider bandgap semiconductors such as GaAs and InP to form planar devices and define device active regions in the fabrication of HEMTs [11], IMPATT diodes [12] and in defining buried heterostructures in laser diodes [13]. A potential advantage to using ion implantation over a diffusion based technique is the greater flexibility in the species to be implanted, as well as potential to achieve greater depths with good uniformity.…”

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confidence: 99%

Planar InAs photodiodes fabricated using He ion implantation

Sandall

Tan

Smith

et al. 2012

IEEE Photonics Conference 2012

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Abstract:We have performed Helium (He) ion implantation on InAs and performed post implant annealing to investigate the effect on the sheet resistance. Using the transmission line model (TLM) we have shown that the sheet resistance of a p + InAs layer, with a nominal doping concentration of 1x10 18 cm −3 , can increase by over 5 orders of magnitude upon implantation. We achieved a sheet resistance of 1x10 5 /Square in an 'asimplanted' sample and with subsequent annealing this can be further increased to 1x10 7 /Square. By also performing implantation on p-i-n structures we have shown that it is possible to produce planar photodiodes with comparable dark currents and quantum efficiencies to chemically etched reference mesa InAs photodiodes. 6(10), 494-496 (1985). 12. J. D. Speight, P. Leigh, N. Mcintyre, I. G. Groves, S. O'Hara, and P. Hemment, "High-efficiency proton-isolated GaAs IMPATT diodes," Electron Lett. 10(7), 98-99 (1974). 13. J. J. Hsieh, J. A. Rossi, and J. P. Donnelly, "Room-temperature cw operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 m," Appl. Phys. Lett. 28(12), 709-711 (1976). 14. M. V. Rao, "High-energy (MeV) ion implantation and its device applications in GaAs and InP," IEEE Trans. ©2012 Optical Society of America

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High-efficiency proton-isolated GaAs IMPATT diodes

Cited by 31 publications

References 2 publications

Proton implantation for isolation of n-type GaAs layers at different substrate temperatures

Proton implantation for isolation of n-type GaAs layers at different substrate temperatures

The effect of substrate temperature on the isolation of n-type GaAs layers using MeV boron implantation

Planar InAs photodiodes fabricated using He ion implantation

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