Proton implantation for isolation of n-type GaAs layers at different substrate temperatures

Ahmed, S.; Gwilliam, R.; Sealy, B.J.

doi:10.1088/0268-1242/16/5/103

Cited by 18 publications

(6 citation statements)

References 11 publications

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“…The previously published data by Ahmed et al [13] for boron isolated GaAs material at RT, 100 and 200 • C shows the presence of thermally stable isolating defects for hot implants with a less pronounced effect of dynamic annealing. The presence of such trap structures corresponding to the isolation implants at either 100 or 200 • C is very much the same in the case of n-type GaAs layers isolated by proton implantation at these substrate temperatures [14]. The results in the case of helium implants are consistent with those obtained for proton implantation in terms of lower damage accumulation due to dynamic annealing and persistence of optimized sheet resistivity values.…”

supporting

confidence: 77%

Ion-beam-induced isolation of GaAs layers by⁴He⁺implantation: effects of hot implants

Ahmed

Gwilliam

Sealy

2001

Semicond. Sci. Technol.

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The formation of thermally stable highly resistive regions in n-type GaAs layers during helium ion bombardment at elevated temperatures, where dynamic annealing of radiation-induced defects is substantial, was investigated and presented here. The substrate temperatures were chosen to be room temperature (RT), 100 and 200 • C. Semi-insulating GaAs wafers of (100) orientation were implanted with multi-energy 29 Si atoms to create a flat dopant distribution of about 0.7 µm in thickness. A uniform damage density was formed within the conductive layer by 2 × 10 14 cm −2 helium implantation at 600 keV to isolate the structure. Resistivity and Hall measurements were performed in order to study the evolution of the sheet resistance and Hall mobility as a function of post implant annealing temperature in these resistors implanted at three different temperatures. The samples were annealed in the range 100-800 • C and an optimum isolation of >10 7 ohms/ was achieved for samples implanted at either RT or elevated temperatures after annealing at 400 or 450 • C, respectively. Annealing at higher temperatures returned the resistivity to a value close to that of the starting material and it was found that RT implants recover quicker than elevated temperature implants. The isolated regions exhibited good stability to heat treatment up to 550 or 650 • C for 100 or 200 • C implants, respectively. No such annealing window for the thermal stability of the obtained isolation was found for samples implanted at room temperature. It is believed that isolating defects are more thermally stable in the case of hot implants than those formed by RT implantation.

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supporting

confidence: 77%

Ion-beam-induced isolation of GaAs layers by⁴He⁺implantation: effects of hot implants

Ahmed

Gwilliam

Sealy

2001

Semicond. Sci. Technol.

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“…[7][8][9][10][11][12][13] Most of those studies have been driven by the need to enhance the current understanding of the physical mechanisms that underlie defect isolation. The results from the comprehensive investigation of de Souza and coworkers [7][8][9][10] suggest that antisite defects created by replacement collisions and/or their defect complexes are responsible for free carrier trapping in GaAs.…”

Section: Introductionmentioning

confidence: 99%

Implant isolation of Zn-doped GaAs epilayers: Effects of ion species, doping concentration, and implantation temperature

Deenapanray

Gao

Jagadish

2003

Journal of Applied Physics

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The electrical isolation of Zn-doped GaAs layers grown by metalorganic chemical vapor deposition was studied using H, Li, C, and O ion implantation. The ion mass did not play a significant role in the stability of isolation, and a similar activation energy of ϳ(0.63Ϯ0.03 eV) was obtained for isolation using either H or O ions. Furthermore, the isolation was stable against isochronal annealing up to 550°C as long as the ion dose was 2-3.5 times the threshold dose for complete isolation, D th , for the respective ion species. By studying the thermal stability and the temperature dependence of isolation, we have demonstrated the various stages leading to the production of stable isolation with the increasing dose of 2 MeV C ions. For ion doses less than 0.5D th , point defects which are stable below 250°C are responsible for the degradation of hole mobility and hole trapping. The stability of isolation is increased to ϳ400°C for a dose D th due to the creation of defect pairs. Furthermore, the hopping conduction mechanism is already present in the damaged epilayer implanted to D th . Higher order defect clusters or complexes, such as the arsenic antisite, As Ga , are responsible for the thermal stability of implantation isolation at 550°C. The substrate temperature ͑Ϫ196 -200°C͒ does not have an effect on the isolation process further revealing that the stability of isolation is related to defect clusters and not point-like defects. An average number of eight carbon ions with energy of 2 MeV are required to compensate 100 holes, which provides a general guideline for choosing the ion dose required for the isolation of a GaAs layer doped with a known Zn concentration. A discussion of the results on the implantation isolation of p-GaAs previously reported in the literature is also included.

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“…Ion implantation provides a method whereby selected regions on a wafer or device can be ''isolated'' with precise depth control, and offers an alternative to mesa etch technology while also being compatible with planar technology. Studies into isolation have already investigated GaAs, [3][4][5][6][7] AlGaAs, 8 GaN, 9 and InP, 10,11 and provide quite different results in terms of the maximum achievable resistivity, depending on the intrinsic characteristics of each semiconductor. In the case of GaAs, resistivities greater than 10 7 ⍀ cm have been produced by implanting n-or p-type layers with ions such as H ϩ , B ϩ , or O ϩ .…”

Section: Introductionmentioning

confidence: 99%

Electrical isolation of n- and p-In0.53Ga0.47As epilayers using ion irradiation

Carmody

Tan

Jagadish

2003

Journal of Applied Physics

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A study of the evolution of sheet resistance of p-and n-type In 0.53 Ga 0.47 As epilayers during O, C, Li, and H irradiation was conducted. The threshold dose at which the material becomes highly resistive increased upon decreasing the mass of the implanted ion, was higher for n-InGaAs as compared to p-InGaAs and was greater for samples with a higher initial free carrier concentration. Implantation with H ϩ yielded isolation behavior that was different from that for implantation with the three medium-mass ions. The thermal stability of defects induced by implantation was also investigated by cumulative annealing, and was found to be slightly higher in n-InGaAs as compared to p-InGaAs. Shallow donor production in the InGaAs epilayer during implantation played a crucial role in determining the electrical characteristics of the samples.

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Proton implantation for isolation of n-type GaAs layers at different substrate temperatures

Cited by 18 publications

References 11 publications

Ion-beam-induced isolation of GaAs layers by⁴He⁺implantation: effects of hot implants

Ion-beam-induced isolation of GaAs layers by⁴He⁺implantation: effects of hot implants

Implant isolation of Zn-doped GaAs epilayers: Effects of ion species, doping concentration, and implantation temperature

Electrical isolation of n- and p-In0.53Ga0.47As epilayers using ion irradiation

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Proton implantation for isolation of n-type GaAs layers at different substrate temperatures

Cited by 18 publications

References 11 publications

Ion-beam-induced isolation of GaAs layers by4He+implantation: effects of hot implants

Ion-beam-induced isolation of GaAs layers by4He+implantation: effects of hot implants

Implant isolation of Zn-doped GaAs epilayers: Effects of ion species, doping concentration, and implantation temperature

Electrical isolation of n- and p-In0.53Ga0.47As epilayers using ion irradiation

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Ion-beam-induced isolation of GaAs layers by⁴He⁺implantation: effects of hot implants

Ion-beam-induced isolation of GaAs layers by⁴He⁺implantation: effects of hot implants