The characteristic association time constant describing the formation of iron-acceptor pairs in crystalline silicon has been measured for samples of various p-type dopant concentrations and species ͑B, Ga, and In͒ near room temperature. The results show that the dopant species has no impact on the pairing kinetics, suggesting that the pairing process is entirely limited by iron diffusion. This conclusion was corroborated by measurement of the activation energy of pair formation, which coincides with the migration enthalpy of interstitial iron in silicon. The results also indicate that the pair-formation process occurs approximately twice as fast as predicted by a commonly used expression.

The excess carrier density at which the carrier lifetime in crystalline silicon remains unchanged after dissociating iron-boron pairs, known as the crossover point, is reported as a function of the boron dopant concentration. Modeling this doping dependence with the Shockley-Read-Hall model does not require knowledge of the iron concentration and suggests a possible refinement of reported values of the capture cross sections for electrons and holes of the acceptor level of iron-boron pairs. In addition, photoluminescence-based measurements were found to offer some distinct advantages over traditional photoconductance-based techniques in determining recombination parameters from low-injection carrier lifetimes

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We study ion-irradiation-induced electrical isolation in n-type single-crystal ZnO epilayers. Emphasis is given to improving the thermal stability of isolation and obtaining a better understanding of the isolation mechanism. Results show that an increase in the dose of 2 MeV 16 O ions ͑up to ϳ2 orders of magnitude above the threshold isolation dose͒ and irradiation temperature ͑up to 350°C) has a relatively minor effect on the thermal stability of electrical isolation, which is limited to temperatures of ϳ300-400°C. An analysis of the temperature dependence of sheet resistance suggests that effective levels associated with irradiation-produced defects are rather shallow (Ͻ50 meV). For the case of implantation with keV Cr, Fe, or Ni ions, the evolution of sheet resistance with annealing temperature is consistent with defect-induced isolation, with a relatively minor effect of Cr, Fe, or Ni impurities on the thermal stability of isolation. Results also reveal a negligible ion-beam flux effect in the case of irradiation with 2 MeV 16 O ions, supporting high diffusivity of ion-beam-generated defects during ion irradiation and a very fast stabilization of collision cascade processes in ZnO. Based on these results, the mechanism for electrical isolation in ZnO by ion bombardment is discussed.

The evolution of sheet resistance of n-type single-crystal wurtzite ZnO epilayers exposed to bombardment with MeV H1, Li7, O16, and Si28 ions at room temperature is studied in situ. We demonstrate that sheet resistance of ZnO can be increased by about 7 orders of magnitude as a result of ion irradiation. Due to extremely efficient dynamic annealing in ZnO, the ion doses needed for isolation of this material are about 2 orders of magnitude larger than corresponding doses in the case of another wide-bandgap semiconductor, GaN. Results also show that the ion doses necessary for electrical isolation close-to-inversely depend on the number of ion-beam-generated atomic displacements. However, in all the cases studied, defect-induced electrical isolation of ZnO is unstable to rapid thermal annealing at temperatures above ∼300 °C.

Impurity‐free intermixing of normalGaAs/Al0.54Ga0.46normalAs quantum wells was carried out using SiOx capping layers grown by plasma enhanced chemical vapor deposition followed by rapid thermal annealing at 950°C. A dependence of quantum well intermixing on the quality of dielectric layer was observed, which was varied by changing the silane flow rate, M (40 sccm ≤ M ≤ 480 sccm). The quality of capping layers were determined using Rutherford backscattering spectroscopy, spectroscopic ellipsometry, secondary ion mass spectrometry, Fourier transform infrared spectroscopy, and P‐etch measurements. The porosity and oxygen content of capping layers, and the incorporation of nitrogen during deposition were the main factors influencing the extent of blue shifts achieved in intermixed quantum wells. Substantially higher energy shifts were obtained for capping layers deposited using M < 160 sccm. Slightly overstoichiometric layers which were relatively more porous but containing less nitrogen were obtained for M < 160 sccm. For higher silane flow rates, substoichiometric oxide layers with increased hydrogen and nitrogen contents were obtained. Our results suggested that the mobility of out‐diffusing Ga atoms during annealing was enhanced by film porosity but was suppressed with increasing nitrogen content in the capping layer. © 2000 The Electrochemical Society. All rights reserved.

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The impact of residual recombination centers after low-energy self-implantation of crystalline silicon wafers and annealing at 900 °C has been determined by bulk carrier lifetime measurements as a function of implant dose. Doses below 10(exp 13) cm-2 resulted in no measurable increase in recombination, while higher doses caused a linear increase in the recombination center density. This threshold value corresponds to the known critical dose required for the formation of relatively stable dislocation loops during high temperature annealing. Deep level transient spectroscopy revealed a decrease in the vacancy-related defect concentration in the high-dose samples, which we interpret as reflecting an increase in the silicon interstitial concentration. This suggests that silicon interstitials, arising from the slowly dissolving dislocation loops, may be responsible for the increased recombination deep within the samples