Broadening of vibrational levels in X-ray absorption spectroscopy of molecular nitrogen in compound semiconductors

Petravić, M.; Gao, Qiang; Llewellyn, David; Deenapanray, Prakash; Macdonald, Daniel; Crotti, C.

doi:10.1016/j.cplett.2006.05.056

Cited by 25 publications

(25 citation statements)

References 20 publications

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“…5). 30 Therefore, the N 1s XPS and the N K-edge NEXAFS spectra support the idea that nitrogen atoms trapped in N-doped TiO 2 nanoribbons may combine to form N 2 molecules evolving into the gas phase upon heating at elevated temperatures. 6).…”

Section: Resultsmentioning

confidence: 60%

“…29 The features of these Ti L-edge indicate that the coordination environment of the titanium atoms in the N-doped TiO 2 samples corresponds to Ti(IV) in a tetragonal structure as suggested by the XPS measurements. 24,30,31 The peak at 400.8 eV of the gas phase N 2 molecules was assigned to a transition from the N 1s to p* orbital and the ne feature is a hallmark of N 2 molecule due to its vibrational structure. 5).…”

Section: Resultsmentioning

confidence: 99%

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Molecular nitrogen in N-doped TiO₂ nanoribbons

et al. 2015

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The nitrogen doping of TiO 2 nanoribbons during the thermal transformation of hydrogen titanate nanoribbons (HTiNRs) between 400 and 650 C in a dynamic ammonia atmosphere was investigated using X-ray photoelectron spectroscopy (XPS), transmission X-ray microscopy combined with near-edge X-ray absorption fine structure spectroscopy (NEXAFS-TXM), X-ray diffraction (XRD) and electron paramagnetic resonance measurements (EPR). Comprehensive structural characterizations have revealed that for a calcination temperature of 400 C, the HTiNRs transform into pure monoclinic TiO 2 b-phase (TiO 2 -B) whereas at higher calcination temperatures (580 and 650 C) a mixture of TiO 2 -B and anatase is obtained. XPS and EPR results clearly reveal the nitrogen doping of TiO 2 nanoribbons and that, depending on the calcination temperature, nitrogen atoms occupy interstitial and substitutional sites.Moreover, in samples calcined at 580 and 650 C the presence of N 2 -like species in the HTiNRs was detected by NEXAFS-TXM. These species are trapped in the HTiNRs structure. EPR measurements upon light illumination have disclosed the generation of photoexcited states which implies that nitrogen has an important effect on the electronic structure of N-doped TiO 2 .

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Section: Resultsmentioning

confidence: 60%

Section: Resultsmentioning

confidence: 99%

Molecular nitrogen in N-doped TiO₂ nanoribbons

et al. 2015

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“…[12,18] The effective c-axis of the confining space is infinite, which should-unlike a tight c-axis-have no effect on the line shape. [19,20] The unchanged lifetime of the X-ray-excited π states, as well as the unaltered vibrational levels, are in-line with one-dimensional containment.…”

Section: Resultsmentioning

confidence: 68%

One-dimensional N2 gas inside single-walled carbon nanotubes

Kramberger

Thurakitseree

Koh

et al. 2013

Carbon

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The unexpected presence of a linear arrangement of co-axially oriented N 2 molecules inside aligned single-walled carbon nanotubes is revealed by high resolution near-edge x-ray absorption spectroscopy. The encapsulated N 2 molecules exhibit free stretching vibrations with a long electronic lifetime of the x-ray-excited anti-bonding π ⋆ states. Molecular dynamics simulations confirm that narrow-diameter nanotubes (d < 1 nm) are crucial for stabilizing the linear arrangement of aligned N 2 molecules.

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“…The RL was attributed to transitions to final states related to N dangling bonds since its characteristics (energy position and full width at half maximum) were independent of the projectile and due to its similarity with the RL observed in the electron energy loss spectra recorded from the core of threading dislocations [18]. Furthermore, a similar RL, attributed to 1s → * transitions of N 2 trapped in the semiconductor, has been detected in the surface sensitive electron yield spectra of bulk semiconductors bombarded with low energy N 2 + [19,20] and in N doped ZnO after annealing [21]. Finally Nord et al [22] used molecular dynamics calculations to predict N segregation in ion implanted GaN while N 2 bubbles formed after 2 and 4.7 MeV Au implantation into GaN are apparent in transmission electron micrographs [8,23].…”

Section: Ss (Mro) Ssmentioning

confidence: 65%