Scanning-electron-beam annealing of ion-implanted p-n junction diodes

McMahon, R.A.; Ahmed, H.; Speight, J D; Dobson, R.M.

doi:10.1049/el:19790311

Cited by 9 publications

(4 citation statements)

References 4 publications

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“…E-beam annealing.--The first actual report of isothermal, 1-100 sec STA annealing employed an e-beam (78,79). In this case a rapidly raster scanned or randomly interlaced e-beam was used to heat a thermally floating silicon chip of a few millimeters on a side to an unknown annealing temperature for 5-10 sec.…”

Section: E-beammentioning

confidence: 99%

Short Time Annealing

Sedgwick¹

1983

J. Electrochem. Soc.

152

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Short time annealing has recently become of interest in silicon processing as a technique to activate ion implanted dopants, remove defects, and regrow amorphized silicon, with minimal diffusion of the dopant atoms. Short time annealing is carried out using a variety of energy sources ranging from arc lamps and resistance heaters with heating times of a few tens of seconds, to laser, electron, and ion sources with heating times of a few milliseconds down to nanoseconds. The annealing processes are grouped according to the time durations of the anneal and with reference to the thermal response time of the silicon. These are designated as adiabatic for < 10−6 sec; thermal flux for 10−6–10−2 sec, and isothermal for > 10−2 sec. Processes in the adiabatic regime result in surface melting, regrowth of silicon free of extended defects, and complete dopant activation. However, the dopant diffuses throughout the melt zone. In the thermal flux and isothermal annealing regimes the dopant can be activated, and amorphous silicon regrown epitaxially with little dopant diffusion. In the limited results reported to date, the complete removal of extended defects has not been achieved. Further investigation may yield new results in extended defect removal.

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Section: E-beammentioning

confidence: 99%

Short Time Annealing

Sedgwick¹

1983

J. Electrochem. Soc.

152

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“…It was widely believed these systems could be quickly modified to counter ICBMs as well. 3 The resultant Nike-Zeus BMD system faced significant technical challenges. The system was supposed to destroy incoming re-entry vehicles (RVs) in outer space with nuclear-tipped interceptor missiles.…”

Section: -1972: the Genesis Of The Abm Treatymentioning

confidence: 99%

The Rise and Fall of the 1972 Anti-Ballistic Missile Treaty: A Study of U.S. Decision-Making

Snyder¹

2003

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“…In addition to using Q-switched and scanned CW lasers to anneal damage in Si created by ionlimplantation, many research groups have reported the utilization of both pulsed ,2 and scanned electron beams 3 -I for this purpose. Some investigators have used these techniques to fabricate devices such as solar cells, 2 n+p,1 and p+n 3 -5 diodes.…”

Section: Introductionmentioning

confidence: 99%

“…This study differs in two imgortant ways from previous reports of scanned e-beam annealing of p+n diodes. 3 …”

Section: Introductionmentioning

confidence: 99%

Scanned Electron Beam Annealing of Boron-Implanted Diodes

1980

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+ Successful annealing of p n arrays fabricated by ion-implantation of 1 1 B (50 keV, 1 x 101 4 cm-2) into Si (100 has been performed using a broadly rastered, low-resolution (0.25-inch diameter) electron beam. A complete 2" wafer could be uniformly annealed in =20 sec with high electrical activation (>75%) and small dopant redistribution (=450 R).Annealing resulted In p+n junctions characterized by low reverse current (=4 nAcm-at 5V reverse bias) and higher carrier lifetime (>80 psec) over the entire 2" wafer.Based on the electrical characteristics of the diodes, we estimate that the electron beam anneal was able to remove ion implantation damage and leave an ordered substrate to a depth of >5.5 pm below the layer junction.

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Scanning-electron-beam annealing of ion-implanted p-n junction diodes

Cited by 9 publications

References 4 publications

Short Time Annealing

Short Time Annealing

The Rise and Fall of the 1972 Anti-Ballistic Missile Treaty: A Study of U.S. Decision-Making

Scanned Electron Beam Annealing of Boron-Implanted Diodes

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