Liquid-phase epitaxial layers of InAs1−xPx were grown in the range of 0 < x < 0. 735 on {1̄1̄1̄} InP substrates. The ternary phase diagram was calculated using Darken's quadratic formalism to describe the ternary liquid which is in equilibrium with a regular pseudobinary solid solution. A number of liquidus isotherms were experimentally determined and found to be in good agreement with the calculated phase diagram. The composition of the grown layers was determined by lattice-constant measurements assuming that Vegard's law was obeyed. The band gap was determined by photoluminescence at 77 and 300 °K, and was fitted to the form of Eg = A + Bx + Cx2, where A = 0. 421, B = 0.714, and C = 0. 281 eV at 77 °K. The specimens were n type as determined by Van der Pauw measurements.
Schottky barrier heights of Au contacts to n-type Si with either etch-polished or vacuum-cleaved interfaces are independent of donor concentration within an experimental uncertainty of about ±0.05 eV for 1014 cm−3≤ND≤1019 cm−3. Within the same uncertainty and over the same doping range, barrier heights determined from capacitance using the standard formula are equal to those determined from photoemission thresholds. A theory for deducing barrier heights from photoemission thresholds that includes the effects of tunneling and image force is presented. The results are interpreted in terms of a simple model for the interface, which is characterized by the thickness d and dielectric constant κ′ of the interfacial film and the density nss of interface states. The insensitivity of the barrier height to the quantity of space charge leads to the following limit on the interfacial parameters: (k′/d)+1.8×10−6nss≥3.8×108 cm−1for d in cm, and nss in cm−2 eV−1.
We report that continuous, incoherent light from a xenon arc lamp can be used to completely activate implanted Si (100) samples (75As+:100 keV, 1×1015 cm−2) with negligible dopant redistribution and excellent uniformity (sheet resistivity variation less than ±2% over a 3-in.-diam wafer). An entire 3-in. wafer could be activated in only about 10 sec without relative motion of wafer and light beam. The extent to which implant damage was removed by the incoherent light anneal is qualitatively indicated by the carrier mobilities which were within 10% of single-crystal values.
Thin films of boron nitride were grown by reactive plasma deposition using the ammonia‐diborane reaction. The crystalline growth on substrates of silicon, compression‐annealed pyrolytic graphite, and compression‐annealed pyrolytic
BN
was investigated by electron microscopy, and composition of the deposited material was determined by electron microprobe analysis. The effect of gas ratio and substrate temperature on growth rate was also investigated. Some crystalline order was observed; the largest single crystal
BN
grains were obtained on compression‐annealed pyrolytic graphite. Resistivities of the order of
2×109 normalΩ‐normalcm
were measured with dielectric constant varying from 2.7 to 7.7 for growth with different gas ratios. Efforts to determine the drift velocity of carriers in thin films of
BN
were not successful.
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