Activation of arsenic-implanted silicon using an incoherent light source

Abstract

We report that continuous, incoherent light from a xenon arc lamp can be used to completely activate implanted Si (100) samples (75As+:100 keV, 1×1015 cm−2) with negligible dopant redistribution and excellent uniformity (sheet resistivity variation less than ±2% over a 3-in.-diam wafer). An entire 3-in. wafer could be activated in only about 10 sec without relative motion of wafer and light beam. The extent to which implant damage was removed by the incoherent light anneal is qualitatively indicated by the carrier mobilities which were within 10% of single-crystal values.

The research progress of Si-based blocked-impurity-band infrared detecting materials and detectors

“…我们对高纯度单晶Si衬底进行As离子注入掺杂以获得 低电阻率的背电极层 [19] . 离子注入会使衬底晶格结构 受到损伤 [27] , 甚至形成无定形Si层, 因此离子注入后需 要对样品进行退火处理以消除缺陷、恢复Si晶格有序 结构 [28][29][30] . 我们向高纯Si中注入了两种不同剂量的As离子以 制备背电极, 注入浓度分别为5×10 15 cm −2 (#1)和 表 1 典型的Si:As BIB焦平面探测器特性 [15] [19] .…”

Evolution of secondary defects in arsenic implanted Si

“…The commonly used annealing temperatures for ion-implanted Si device manufacture were chosen. [25][26][27][28] The microstructure and the electrical characterizations of the as-implanted and annealed Si samples were performed to understand the dynamics of the secondary defects. Defects in PR and EOR and their evolution were observed via high resolution transmission electron microscope (HRTEM).…”

Isothermal Annealing of Ion Implanted Silicon With a Graphite Radiation Source

“…has been investigated as a means to anneal implants with minimal dopant diffusion [1]. Large area raster scanned electron beams [2,3], high intensity arc lamps [4] and graphite strip heaters [5] have all been used. Varian has developed a system which uses infrared radiation from a resistively heated sheet of graphite to anneal ion implanted silicon [6][7][8][9].…”