Evolution of secondary defects in arsenic implanted Si

Abstract

Behavior of defects in ion-implanted semiconductors is an everlasting topic and becomes even more critical as semiconductor devices continuously shrink and ion implantation technique has been increasingly employed. High resolution transmission electron microscope (HRTEM) and energy dispersive X-ray (EDX) were employed to investigate the structural evolution of arsenic (As) implanted silicon (Si). Project range (PR) defects and end of range (EOR) dislocations are observed via HRTEM. EDX characterization proves the two types of defects are related to dopant atoms precipitations. The sizes of both PR defects and EOR dislocations enlarge at the expense of small ones with the elevation of annealing temperature. The characterizations of electrochemical capacitance–voltage and EDX conclude that the SiO2/Si interface is playing an indispensable role in the deactivation of dopant atoms during the annealing process. As atoms are detected in the As-implanted Si region near the SiO2/Si interface but not in the silica layer. Nanoparticles composed of Si atoms in the silica layer are observed in the 1150 °C-annealed samples, which proves the migration of oxygen atoms at the SiO2/Si interface.

The research progress of Si-based blocked-impurity-band infrared detecting materials and detectors

“…GaAs基BIB探测器的发展 比Ge基更落后: 在GaAs材料的生长过程中, 化学计量 比的偏差会产生高浓度的本征缺陷, 极大地限制了 BIB探测器的性能; GaAs材料的自扩散十分严重, 极 难在杂质浓度很高的吸收层上生长高纯度阻挡层 [18] . [5,[19][20][21][22][23][24][25] . 本文对这些研究进展进行 了总结, 包括: Si基BIB红外探测器材料和器件的研究 进展, 例如通过离子注入制备掩埋电极的方式成功研 制了垂直结构的Si:P BIB探测器, 其截止波长在30 μm 以上 [19][20][21] ; 利用体等离激元效应改进了背入射式BIB 器件的结构设计, 提高了光电性能, 使探测器的黑体 探测率在5 K时达到1.6×10 11 Jones [21] ; 从理论上对比研 究分析了BIB红外探测器的常规工作模式(Conventional Operation Mode, COM)和反常工作模式(Alternate Operation Mode, AOM) [22] ; 表面等离激元(Surface Plasmon Polariton, SPP)耦合结构被分别引入到垂直结 构和平面结构两种BIB红外探测器结构的设计和制备 之中, 且实现了对探测器响应光谱的调制与性能的提 升 [23,25] .…”

“…表 2 样品参数 [20] 图 8 (网络版彩图) (a1) 样品1-e的TEM图, 插图为As离子注入区的透射电子衍射图案; (a2) 样品1-e中无缺陷区域的EDX数据; (a3) 样品1-e中PR缺陷的EDX数据, 插图为样品2-b中观察到的EOR位错区域的EDX数据; (b1) 样品2-b的TEM图, 插图为As离 子注入区的透射电子衍射图案; (b2), (b3) 样品2-b中的EOR型位错 [20] . 图片来自文献, 已获得授权 [20] . 图片来自文献, 已获得授权 的方法测量得到, 具体结果如图12所示 [21,22,40] .…”

“…图片来自文献, 已获得授权 的方法测量得到, 具体结果如图12所示 [21,22,40] . 图 10 (网络版彩图)样品1-c,1-d和1-e的ECV数据 [20] . 图片 来自文献, 已获得授权 [20] .…”

“…Color online) (a1) TEM of sample 1-e; the inset is the diffraction pattern in the As-implanted Si region; (a2) EDX data in the defect-free region in sample 1-e; (a3) EDX data of PR defects in sample 1-e. The inset is the EDX result of EOR dislocations observed in sample 2-b; (b1) TEM of sample 2-b; the inset is the diffraction pattern in the As-implanted Si region; (b2), (b3) HRTEM of EOR dislocations in sample 2-b[20]. Reprinted with permission.…”

Техника Электрохимического Вольт-Фарадного Профилирования Сильно Легированных Структур С Резким Профилем Распределения Примеси

“…В методе электрохимического вольт-фарадного профилирования традиционно измерения проводятся при фиксированной частоте, которая выбирается в начале из-мерений. Такой подход также корректен для простых однородно легированных структур, однако, как показывает экспериментальный опыт, в случае резкого снижения концентрации примеси в глубину образца такая техника может вызывать появление различных артефактов на измеряемом концентрационном профиле [10,11].…”