Growth and Characterization of Liquid-Phase Epitaxial InAs1−xPx

Abstract

Liquid-phase epitaxial layers of InAs1−xPx were grown in the range of 0 < x < 0. 735 on {1̄1̄1̄} InP substrates. The ternary phase diagram was calculated using Darken's quadratic formalism to describe the ternary liquid which is in equilibrium with a regular pseudobinary solid solution. A number of liquidus isotherms were experimentally determined and found to be in good agreement with the calculated phase diagram. The composition of the grown layers was determined by lattice-constant measurements assuming that Vegard's law was obeyed. The band gap was determined by photoluminescence at 77 and 300 °K, and was fitted to the form of Eg = A + Bx + Cx2, where A = 0. 421, B = 0.714, and C = 0. 281 eV at 77 °K. The specimens were n type as determined by Van der Pauw measurements.

Temperature dependence of the band gap in InAsyP1−y

“…Apart from the published relationship between band gap and alloy compositions for the ternary systems for InAs y P 1Ϫy , 17 there appeared to be a small change in the parameters of nonlinearity, namely, in bowing parameters, with temperature. 18,19 Beaudoin et al 12 Figure 4 shows the variation of the limiting values calculated for the parameters in Table II and the effective temperature coefficients obtained from the band gaps measured at 77 and 300 K, ͓E g (77)ϪE g (300)/(77Ϫ300)͔.…”

“…For InAs y P 1Ϫy , the band gap and its temperature dependence are essential material parameters in the design and fabrication of devices as well as the determination of epitaxial growth conditions. [17][18][19][20][21] However, for InAs y P 1Ϫy , the variation with composition of the band gap temperature dependence reported so far 17,18 significantly differs from that of InGaAs 22 and InGaAsP. 19 Beaudoin et al 12 discovered a large discrepancy in the reported values of the bowing parameters in the variation of the InAs y P 1Ϫy band gap with composition.…”

Band‐Selective Infrared Photodetectors with Complete‐Composition‐Range InAsxP1‐x Alloy Nanowires

“…The ternary alloys of InP and InAs, InAs x P 1‐ x , with potential bandgap tunability from the near‐IR region [for InP ( x = 0), 1.42 eV] to the mid‐IR region [for InAs ( x = 1), 0.35 eV], are especially important for realizing broadly tunable optoelectronic devices in the IR region . InAsP alloy NWs with large composition tunability have only been obtained by a complex and expensive chemical beam epitaxy (CBE) route, involving comprehensively modulating the source pressure and the temperature . In this work, InAs x P 1‐ x (0 ≤ x ≤ 1) alloy NWs with completely tunable compositions have been achieved through a simple two‐step growth strategy.…”

“…We know that, because P is less soluble than As in AuIn alloy, growth of InAsP alloy NWs with complete composition tunability by means of the AuIn‐catalyzed VLS route has some difficulties . In order to increase the P content in InAsP NWs, here we used an additional IE process, following the formation of the VLS‐induced InAs NWs (as shown in Figure S5 in the Supporting Information).…”

Когерентный рост нитевидных нанокристаллов InP/InAsP/InP на поверхности Si(111) при молекулярно-пучковой эпитаксии

“…ширинам запрещенных зон объемного материала InAs 1−x P x , получен-ных при росте InAsP с различным соотношением As/P. Показатель процентного содержания фосфора x можно оценить по формуле 0.35 + 0.714x + 0.281x 2 = 0 (без учета разницы ширины запрещенной зоны для вюрцитной фазы) [18]. Таким образом, x = 0.33 для образца Р.Р.…”