Temperature dependence of the band gap in InAsyP1−y

Abstract

The temperature dependence of the band gap in InAsyP1−y (y=0–0.67) has been determined by photoluminescence, x-ray diffraction, and absorption spectra measurements. We found that the measured data within the temperature range of 77–300 K can be expressed by the equation proposed by O’Donnell and Chen. The band gap at 77 K is given by Eg=1.407−1.073y+0.089y2, while the compositional dependence of the band gap observed at 300 K, agrees with the values previously reported. We confirmed that changes in temperature caused a slight change in the bowing parameters, and hence found that the band gap temperature dependence of InAsyP1−y (y=0–1) varies very little with changes in composition (2.5–3.5×10−4 eV/K).

Band parameters for III–V compound semiconductors and their alloys

“…572 A recent fitting of the absorption spectra of InAsP/InP strained quantum wells also yielded a weak temperature dependence, but with values between 0.10 and 0.12 eV. 573 Similar results were reported by Wada et al, 574 who used a combination of PL, x-ray diffraction, and absorption measurements. We recommend a value of C ϭ0.10 eV, which is consistent with the latest experimental works and is slightly lower than the theoretical estimate of 0.23 eV.…”

Effect of epilayer's growth temperature on crystalline quality of InAs0.6P0.4/InP grown by two-step growth method

“…Fig. 4 shows the PL spectrum of the four samples measured at 77 K. The band-gap energy of the samples is about 0.7944 eV that is consistent with the value of 0.7952 eV calculated with the formula E g = 1.407 − 1.073x + 0.089x 2 in [17]. The FWHM of PL is 27.5 meV, 24.5 meV, 30.2 meV, and 31.7 meV, as shown in Fig.…”

Photoluminescence lineshape and dynamics of localized excitonic transitions in InAsP epitaxial layers

“…With regard to this thermal dependency, the phonon coupling model proposed by O'Donnell and Chen 26 is more appropriate for describing E g (T) for InAs x P xÀ 1 alloys than either the Varshini or Bose-Einstein equations. 27 This model asserts that the temperature dependence of the band gap is as follows:…”