Band‐Selective Infrared Photodetectors with Complete‐Composition‐Range InAsxP1‐x Alloy Nanowires

Ren, Pinyun; Hu, Wei; Zhang, Qinglin; Zhu, Xiaoli; Zhuang, Xiujuan; Ma, Liang; Fan, Xiaopeng; Zhou, Hong; Liao, Lei; Duan, Xiangfeng; Pan, Anlian

doi:10.1002/adma.201402945

Cited by 72 publications

(72 citation statements)

References 38 publications

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“…It has been proved that one-dimensional (1-D) semiconductor nanostructures with huge advantages in fabricating of highsensitivity micro-photodetectors [8,9]. Especially the 1-D alloyed nanostructures, such as CdSSe and AlGaN nanostructures have been proved with good photoelectric properties due to their excellent transportation properties and tunable bandgap [10e17].…”

Section: Introductionmentioning

confidence: 99%

Large-area photodetector with high-sensitivity and broadband spectral response based on composition-graded CdSSe nanowire-chip

Guo

Song

et al. 2015

Journal of Alloys and Compounds

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Section: Introductionmentioning

confidence: 99%

Large-area photodetector with high-sensitivity and broadband spectral response based on composition-graded CdSSe nanowire-chip

Guo

Song

et al. 2015

Journal of Alloys and Compounds

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“…This concept provides a new platform for designing high-performance optoelectronic devices. [23] We reported graded CdS x Se 1-x nanobelt solar cells by utilizing continuous stepped energy levels to drive electrons and holes toward opposite direction. [22] Compared to the homogeneously doped BiVO 4 , the continuous built-in band bending induces the directional transfer of photogenerated holes from core to surface and thus increases the carrier separation efficiency to 60%.…”

mentioning

confidence: 99%

Gradient Energy Band Driven High‐Performance Self‐Powered Perovskite/CdS Photodetector

et al. 2019

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possess lower dark currents and higher detectivities. In spite of great progresses, it is complicated to fabricate composite electronic transport layers (ETLs) with matched crystal lattices and energy levels, otherwise the newly formed interface in the composite may bring about large amounts of defects which act as trap sites and recombination centers.Spatially graded composition (bandgap) is an effective route to continuously tune energy levels and bandgap in semiconductors, [20,21] in which the interfacial recombination is alleviated or removed and a graded built-in potential through the whole bulk is produced, enabling stronger separation capability of photogenerated electron-hole pairs. This concept provides a new platform for designing high-performance optoelectronic devices. For example, Krol and co-workers fabricated the gradient W-doped BiVO 4 as a photoanode of photoelectrochemical cell. [22] Compared to the homogeneously doped BiVO 4 , the continuous built-in band bending induces the directional transfer of photogenerated holes from core to surface and thus increases the carrier separation efficiency to 60%. Tailoring the gradient bandgap from 0.35 to 1.42 eV, Pan and co-workers synthesized InAs x P 1-x nanosheets for band-selective infrared photodetectors. [23] We reported graded CdS x Se 1-x nanobelt solar cells by utilizing continuous stepped energy levels to drive electrons and holes toward opposite direction. [24] In p-i-n structured devices, [25][26][27][28] graded composition (bandgap) is basically used in the main photosensitive layer, for which the narrow bandgap region increases the absorption wavelength range, the large bandgap results in a high voltage output, and graded bandgap structure promotes the carriers transport. Inspired by previous results, with the introduction of gradient built-in band bending at the charge extraction layer/perovskite interface, the energy band offset is expected to provide the driving force for enhanced carrier separation, suppressed electron reflux, and reduced recombination, boosting the performance of perovskite photodetectors.In this work, we present a high-performance self-powered photodetector by integrating perovskite with gradient O-doped CdS nanorod array. For the first time, the continuous builtin band bending is introduced at the charge extraction layer/ perovskite interface to manipulate the transfer behavior of carriers in perovskite photodetectors. The optoelectronic measurements reveal that both the responsivity and the response speed of devices strongly depend on the structure of energy band bending. The optimum gradient O-doped CdS/perovskite Self-powered photodetectors are highly desired to meet the great demand in applications of sensing, communication, and imaging. Manipulating the carrier separation and recombination is critical to achieve high performance. In this paper, a self-powered photodetector based on the integrated gradient O-doped CdS nanorod array and perovskite is presented. Through optimizing the degree of continuous built-in ba...

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“…To achieve broadband photodetection, axial alloyed nanostructures with axially tuned compositions have also been fabricated and applied in the photodetector. Pan's group has done many exciting works on synthesizing such structures, such as CdS x Se 1− x , InAS x P 1 −x and GaInSb . Recently, they synthesized a high‐quality CdS x Se 1− x nanorod heterostructures through an in‐situ source changing CVD route.…”

Section: D/1d Nanostructured Photodetectorsmentioning

confidence: 99%

Hybrid Nanostructures for Photodetectors

Tian

Liú

Cao

et al. 2016

Advanced Optical Materials

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0D/1D Nanostructured PhotodetectorsDue to the superior optoelectronic properties and enhanced light absorption efficiency relative to their thin film or bulk counterparts, 1D nanostructures are ideal building blocks for photodetectors. In 2001, Lieber's group demonstrated one of the first examples of an individual InP nanowire-based By combining unique properties of individual constituents, hybrid nano structures consisting of two or more components with distinct functionality, usually exhibit optimized optoelectronic performance. Hybrid nanostructures have been widely studied and applied as building blocks to construct photo detectors, which exhibit excellent characteristics in terms of large respon sivity, high sensitivity, fast response speed, and broad photoresponse. This article provides a comprehensive summary about recent progress on hybrid nanostructures containing various nanomaterials, and their performance as photodetectors. Perspectives and outlooks on the promising future directions of this research field are summarized and highlighted.

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Band‐Selective Infrared Photodetectors with Complete‐Composition‐Range InAs_xP_1‐x Alloy Nanowires

Cited by 72 publications

References 38 publications

Large-area photodetector with high-sensitivity and broadband spectral response based on composition-graded CdSSe nanowire-chip

Large-area photodetector with high-sensitivity and broadband spectral response based on composition-graded CdSSe nanowire-chip

Gradient Energy Band Driven High‐Performance Self‐Powered Perovskite/CdS Photodetector

Hybrid Nanostructures for Photodetectors

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