The construction of a passively stabilized external cavity diode laser operating at 780 nm is reported. The sensitivity of laser frequency to changes in air pressure was studied and subsequently eliminated. The relative frequency stability obtained was 4 × 10(-9) for an integration time of 4000 s.
With each new technology generation, photomask manufacturing faces increasing complexity due to shrinking designs and accelerating use of reticle enhancement techniques. Denser and more complex patterns on the mask result in lower yields and long write and turn-around times, important factors for the rapidly increasing mask related costs in IC manufacturing.Laser pattern generators operating at DUV wavelengths were recently introduced to provide cost effective alternatives to electron-beam systems for printing of high-end photomasks. DUV wavelengths provide the required resolution and pattern fidelity. Optical tools that use raster writing principles and massively parallel printing ensure short and predictable write times for photomasks almost independent of pattern complexity.One such high-volume production system, the Sigma7300, uses spatial light modulator (SLM) technology and a 248 nm excimer laser for printing. Partially coherent imaging and multi-pass printing as in a lithography scanner further increases resolution and pattern accuracy. With four-pass printing the system provides resolution and pattern accuracy meeting mask requirements for critical layers at the 90-nm node and sub-critical layers at the 65-nm node and beyond.The paper discusses how mask layout can be optimized to take full advantage of the speed potential provided by the SLM-based writer. It shows how flexible use of the writing principle can provide cost effective writing solutions for many layers in high-end mask sets. Resolution and pattern accuracy results from the Sigma7300 will be presented together with write times for different types of designs.
New technologies applied to visible diode lasers allow stabilization of an extended-cavity system using an internal iodine cell.Preliminary results at wavelengths around 633 nm are encouraging and show that such systems may some day replace the He-Ne lasers now used as frequency standards.The tunability of the diode lasers makes it possible to access iodine transitions which absorb more strongly than those usually used with He-Ne lasers.
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