Abstract:The construction of a passively stabilized external cavity diode laser operating at 780 nm is reported. The sensitivity of laser frequency to changes in air pressure was studied and subsequently eliminated. The relative frequency stability obtained was 4 × 10(-9) for an integration time of 4000 s.
“…To accomplish this stability, it is desirable for the stabilization systems to use a narrow linewidth LD, such as an external-cavity laser diode ͑ECLD͒ or distributed Bragg reflector ͑DBR͒ type of LD. However, due to its structure, an ECLD has unpleasant characteristics, because it is feeble against mechanical impact 2 or other external disturbances, 3 and it needs acoustooptic modulator ͑AOM͒ or electro-optic modulator ͑EOM͒ devices to modulate the wavelength. Since these problems must be excluded in terms of power consumption and mechanical sturdiness, we necessarily selected the DBR-type LD, which has other advantages, such as single-mode oscillation and a capability of wavelength tuning.…”
We have developed a wavelength-stabilized laser diode (LD) for geophysical measurement devices, which benefit from the uniformity of laser light. Regarding this purpose, a system that has such characteristics as low power consumption, sturdiness against mechanical disturbances, and a long life with long-term frequency stability is especially required. Therefore, we adopt as the light source a distributed Bragg reflector (DBR) LD because it has various advantages concerning such properties. This paper describes the durable and compact wavelength-stabilized laser system. Since our DBR-LD oscillates at 852 nm, we selected the Cs-D2 line (6 2S1/2-6 2P3/2 transition) as a frequency reference to obtain a long-term stability in wavelength. Stabilization is performed by a feedback system using a modulation transfer (MT) method, which is a kind of Doppler-free saturated absorption spectroscopy, to acquire a saturated absorption signal with a high signal-to-noise ratio. Using this system, we could continuously lock the laser frequency to the hyperfine component of the Cs-D2 line for more than one week. By an Allan standard deviation measurement, the uncertainty of the stabilized laser frequency was found to be better than 1 x 10(-10) (<40 kHz) in a Gatetime region longer than 100 s.
“…To accomplish this stability, it is desirable for the stabilization systems to use a narrow linewidth LD, such as an external-cavity laser diode ͑ECLD͒ or distributed Bragg reflector ͑DBR͒ type of LD. However, due to its structure, an ECLD has unpleasant characteristics, because it is feeble against mechanical impact 2 or other external disturbances, 3 and it needs acoustooptic modulator ͑AOM͒ or electro-optic modulator ͑EOM͒ devices to modulate the wavelength. Since these problems must be excluded in terms of power consumption and mechanical sturdiness, we necessarily selected the DBR-type LD, which has other advantages, such as single-mode oscillation and a capability of wavelength tuning.…”
We have developed a wavelength-stabilized laser diode (LD) for geophysical measurement devices, which benefit from the uniformity of laser light. Regarding this purpose, a system that has such characteristics as low power consumption, sturdiness against mechanical disturbances, and a long life with long-term frequency stability is especially required. Therefore, we adopt as the light source a distributed Bragg reflector (DBR) LD because it has various advantages concerning such properties. This paper describes the durable and compact wavelength-stabilized laser system. Since our DBR-LD oscillates at 852 nm, we selected the Cs-D2 line (6 2S1/2-6 2P3/2 transition) as a frequency reference to obtain a long-term stability in wavelength. Stabilization is performed by a feedback system using a modulation transfer (MT) method, which is a kind of Doppler-free saturated absorption spectroscopy, to acquire a saturated absorption signal with a high signal-to-noise ratio. Using this system, we could continuously lock the laser frequency to the hyperfine component of the Cs-D2 line for more than one week. By an Allan standard deviation measurement, the uncertainty of the stabilized laser frequency was found to be better than 1 x 10(-10) (<40 kHz) in a Gatetime region longer than 100 s.
“…For our typical weather parameters and wavelength of 852 nm, we find ∂n air /∂P = 2.64 × 10 −9 Pa −1 and ∂n air /∂(RH%) = −9.5 × 10 −9 (RH %) −1 . Using the condition that the laser wavelength must change to absorb the change in optical length [10], we find ∂ν/∂P = -80 MHz/hPa and ∂ν/∂(RH%) = 3 MHz/(RH%) for our laser -however, these figures hold only if the laser is fully exposed to the lab environment.…”
mentioning
confidence: 79%
“…Typical ECDL drift rates can be as large as several GHz/h [5,6], and primarily result from thermal cavity expansion induced by changes in environmental conditions [7]. To combat this, ECDLs often employ active temperature stabilization [8,9] and/or athermal designs [10,11]. In these cases, typical ECDL drift rates are a few tens of MHz/h.…”
We present the design, construction, and simulation of a simple, low-cost external cavity diode laser with a measured free-running frequency drift rate of 1.4(1) MHz/h at 852 nm. This performance is achieved via a compact, nearly monolithic aluminum structure to minimize temperature gradients across the laser cavity. We present thermal finite element method simulations which quantify the effects of temperature gradients, and suggest that the drift rate is likely limited by laser-diode aging.
Studies are reported on frequency drifts in extended-cavity diode lasers caused by external effects, such as changes in temperature and air pressure. A laser system operating at 780 nm has been constructed utilizing low expansion materials and such mechanical structures that compensate for the external effects. By placing the laser system in a pressure-proof and temperature-controlled housing, a relative frequency stability of better than 10−10 (40 kHz) is obtained for integration times of 10 μs to 10 s. The drift of the laser frequency caused by spectral aging of the diode laser is about 3 MHz/h. As a consequence of high passive stability, the variations of the laser intensity are also greatly reduced to a relative drift value of 4×10−5/h.
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