Properties of a 248-nm DUV laser mask pattern generator for the 90-nm and 65-nm technology nodes

Aman, J.; Fosshaug, Hans; Hedqvist, Tobias; Harkesjo, Jan; Hogfeldt, Peter; Jacobsson, Marie; Karawajczyk, A.; Karlsson, Johan; Rosling, M; Sjöberg, Henrik

doi:10.1117/12.519970

Cited by 10 publications

(4 citation statements)

References 9 publications

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“…The functionality of the Sigma7300 mask writer is similar to optical lithography systems, using a 248 nm pulsed excimer laser operating at a repetition rate of 2 kHz 8,9 . Between laser flashes, a spatial light modulator (SLM) is programmed with the mask pattern, which is then de-magnified and imaged onto the mask with 0.82 NA optics.…”

Section: Writer and Alignment System Overviewmentioning

confidence: 99%

Second level exposure for phase shift mask applications using an SLM-based DUV mask writer

et al. 2005

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Phase shift mask (PSM) applications are becoming essential for addressing the lithography requirements of the 65 nm technology node and beyond. Many mask writer properties must be under control to expose the second level of advanced PSM: second level alignment system accuracy, resolution, pattern fidelity, critical dimension (CD) uniformity and registration. Optical mask writers have the advantage of process simplicity for this application, as they do not require a discharge layer. This paper discusses how the mask writer properties affect the error budget for printing the second level. A deep ultraviolet (DUV) mask writer with a spatial light modulator (SLM) is used in the experimental part of the paper. Partially coherent imaging optics at the 248 nm wavelength provide improved resolution over previous systems, and pattern fidelity is optimized by a real-time corner enhancement function. Lithographic performance is compared to the requirements for second level exposure of advanced PSM. The results indicate sufficient capability and stability for 2 nd level alternating PSM patterning at the 65 nm and 45 nm nodes.

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Section: Writer and Alignment System Overviewmentioning

confidence: 99%

Second level exposure for phase shift mask applications using an SLM-based DUV mask writer

et al. 2005

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“…The recent introduction of high-productivity DUV laser mask writers has been facilitated by a relatively straight forward adaptability to the standard materials and processes used for 50 keV VSB. This adaptation has been described for binary masks in a series of papers [1][2][3] for the SLM-based DUV (248 nm) Sigma7300 mask writer [4][5], papers that have also suggested possible optimizations of the materials and processes for the Sigma7300. An overview of the Sigma7300 process papers is found in Table 1.…”

Section: Introductionmentioning

confidence: 97%

High performance FEP-171 resist process in combination with NTAR7 and NTAR5 chrome and the Sigma7300 DUV mask writer

et al. 2005

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FEP-171 resist is commonly used both together with 50 keV VSB and DUV laser mask writers. To improve resolution and other lithographic parameters, the industry has strived towards thinner resist and absorber films on the mask blank. The chrome thickness and etch resistance limit how thin the resist can be. The NTAR7 (730Å) chrome was optimized for binary masks for 193 nm lithography, while NTAR5 (590Å) chrome is used for attenuated PSM blanks with a MoSi absorber beneath the chrome film.Resolution and lithographic performance can be improved further by integrating improved processes, including PEB, development and dry-etch. Micronic has in a series of papers described improvements to the FEP-171 process in combination with different chrome films and the SLM-based DUV (248 nm) Sigma7300 mask writer. The thickness of FEP-171 for Sigma7300 has been optimized for NTAR7 chrome and improvements have been described for the PEB and dry-etch process of the FEP-171/NTAR7 blanks.In this paper we describe the FEP-171 process development further. We have investigated improvements to the develop process for FEP-171/NTAR7 blanks using Design of Experiments (DOE) and a Steag Hamatech ASP-5000. Improved performance on mask, especially for CD linearity and clear-field/dark-field deviation, was achieved using the resulting development recipe together with the Sigma7300. Better than 5 nm (range) CD linearity in chrome was demonstrated for isolated spaces in the range 200-1400 nm.This work also covers a process study of FEP-171 on NTAR5 chrome. The resist thickness was optimized to 3200Å for the Sigma7300 and the performance was tested in terms of resolution, resist profile, CD linearity and CD uniformity. Resolution of 120 nm isolated lines and 140 nm isolated spaces was demonstrated, as well as 4 nm (range/2) global CD uniformity.

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“…With the Sigma7300, Micronic Laser Systems introduced a pattern generator technology based on bitmapped data that projects a partially coherent image rather than scanning Gaussian beams 1 . In addition to the benefit of pattern complexity-independent write time, the image quality is enhanced with methods derived from wafer optical lithography.…”

Section: Introductionmentioning

confidence: 99%

Improved CD uniformity for advanced masks using the Sigma7500 pattern generator and ProcessEqualizer

Eklund

Österberg

Hellgren

et al. 2007

23rd European Mask and Lithography Conference

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Managing the total CD error in advanced mask manufacturing requires that error contributions from writing, process and metrology are minimized. This paper describes how both the writing and process contributions have been addressed in the Sigma7500 DUV laser pattern generator, which prints masks by imaging a programmable spatial light modulator (SLM). System enhancements have reduced the writing contribution to global CD uniformity to 5 nm (3s). Processrelated CD error sources, such as the signatures from mask developing and etching can be significant contributors to the total CD error in mask manufacturing. These errors are classified as being either pattern-independent or patterndependent, and the effects of both can be reduced using the ProcessEqualizer feature of the Sigma7500. This software tool performs CD sizing during writing based on pattern density maps derived during mask data preparation, along with tunable parameters that are determined experimentally. The CD sizing function has no effect on system throughput and does not require flattening and re-fracturing of the pattern data.

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Properties of a 248-nm DUV laser mask pattern generator for the 90-nm and 65-nm technology nodes

Cited by 10 publications

References 9 publications

Second level exposure for phase shift mask applications using an SLM-based DUV mask writer

Second level exposure for phase shift mask applications using an SLM-based DUV mask writer

High performance FEP-171 resist process in combination with NTAR7 and NTAR5 chrome and the Sigma7300 DUV mask writer

Improved CD uniformity for advanced masks using the Sigma7500 pattern generator and ProcessEqualizer

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