Continuous Fiber Ceramic Composite (CFCC) tubes have been manufactured using cure-on-the-fly and no cure-on-the-fly filament winding by preceramic polymer pyrolysis route. Processing guidelines to effectively use the cure-on-the-fly filament winding technique for the manufacture of CFCCs are introduced in this paper. The preceramic polymer used in this work is Blackglas™ (a siloxane polymer). A filament winding machine was designed to adapt to the brittle nature of the fibers and the relatively low temperature cure of the polymer. Seven reinfiltration/pyrolysis cycles, with about 17 hours per cycle, were necessary to reach a convergence by weight. C-ring tests at both room and high temperature were performed to assess the quality of the manufactured parts. Scanning Electron Microscopy (SEM) was used to further examine the microstructure and quality of the parts. Effects of infrared cure-on-the-fly, fiber coating/material system, part thickness, and service temperature on the processing and mechanical performance of the manufactured CFCCs were studied.
Phase shift mask (PSM) applications are becoming essential for addressing the lithography requirements of the 65 nm technology node and beyond. Many mask writer properties must be under control to expose the second level of advanced PSM: second level alignment system accuracy, resolution, pattern fidelity, critical dimension (CD) uniformity and registration. Optical mask writers have the advantage of process simplicity for this application, as they do not require a discharge layer. This paper discusses how the mask writer properties affect the error budget for printing the second level. A deep ultraviolet (DUV) mask writer with a spatial light modulator (SLM) is used in the experimental part of the paper. Partially coherent imaging optics at the 248 nm wavelength provide improved resolution over previous systems, and pattern fidelity is optimized by a real-time corner enhancement function. Lithographic performance is compared to the requirements for second level exposure of advanced PSM. The results indicate sufficient capability and stability for 2 nd level alternating PSM patterning at the 65 nm and 45 nm nodes.
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