Articles you may be interested inSuper critical thickness SiGe-channel heterostructure p -type metal-oxide-semiconductor field-effect transistors using laser spike annealing High hole mobility in Si 0.17 Ge 0.83 channel metal-oxide-semiconductor field-effect transistors grown by plasma-enhanced chemical vapor deposition Scaling the SiGe channel p metal-oxide-semiconductor field effect transistor: The case for p+ SiGe gatesIn contradiction with researchers who try to incorporate a maximum of Ge in the channel, we will demonstrate, in spite of a low Ge fraction ͑15% or 30%͒ and in spite of the competition between Si cap and Si 1Ϫx Ge x channels, that we obtain a good trade-off between the gain in drain current, the Si/SiGe interface quality ͑which is responsible for the mobility reduction by scattering on the interface state and responsible for the drain junction leakage current͒, and process simplicity. In this article, we also discuss the good quality of the Si 1Ϫx Ge x interface obtained using 15% or 30% Ge. We then propose a new method, directly applicable to the transistor, to study the Si/SiGe interface via admittance spectroscopy.
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