We have developed an advanced LTPS TFT technology in which top-gate oxide TFTs are used in each pixel and CMOS LTPS TFTs are used in gate drivers and multiplexers in the peripheral circuits. Oxide TFTs have excellent I ds -V gs characteristics with a small V th shift under negative bias temperature illumination stress (NBTIS).
A thin-film-transistor (TFT) technology for plastic-film liquid crystal displays (LCDs) was developed herein. Top-gate oxideTFTs with channel lengths L 2 and 3 m were fabricated on a transparent polyimide layer at approximately 300C using Generation 4.5 mother glass. The desirable performance and reliability of the TFTs were obtained.
The mechanism of SiGe film growth from Si2H6 and GeF4 was examined by ab initio B3LYP/6-31G** calculations using three cluster surface models. Energies of reaction and activation were calculated, and the process of SiGe film growth was analyzed. It was found that the reaction of GeF4 with Si2H6 formed GeF2 by much lower activation energy than decomposition of GeF4. In addition, GeF2 made activation energy of surface reactions lower than using only Si2H6.
The influences of hydrogen atoms on Ge heteroepitaxial growth on
Si(111) surfaces using solid phase epitaxy (SPE) have been investigated
by scanning tunneling microscopy (STM).
In the SPE growth of Ge films on H-terminated Si(111) surfaces, the formation of
3-dimensional (3D) Ge islands
are suppressed.
With the desorption of H atoms, the 3D islands appear on the Ge surface,
which are considered to be formed by the agglomeration of Ge atoms.
The density of the islands is decreased and the size of the islands is increased
by the existence of Si-H bonding at the Ge/Si interface.
These phenomena are considered to be caused by the release of the stress in the Ge
film and the weakening of the interaction between the Ge film and the Si
substrate by Si–H bonding.
In addition, the activation energy of the migration of Ge atoms during
the agglomeration is determined to be 0.3 eV.
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