High-performance self-aligned SiGeC HBT with selectively grown Si/sub 1-x-yGe/sub x/C/sub y/ base by UHV/CVD

Oda, Katsuya; Ohue, E.; Suzumura, Isao; Hayami, R.; Kodama, A.; Shimamoto, H.; Washio, Katsuyoshi

doi:10.1109/ted.2003.816660

Cited by 11 publications

(2 citation statements)

References 9 publications

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“…Silicon germanium (SiGe) heterojunction bipolar transistors (HBTs) are promising candidates for use in ultra-high-speed communication systems operating with widebandwidth microwaves and millimeter waves [1]. To obtain higher operation speeds and lower power consumption levels, base width and emitter-base/collector-base capacitances must be reduced simultaneously.…”

Section: Introductionmentioning

confidence: 99%

Ultra-Low-Power SiGe HBTs using High-Precision RT-CVD Epitaxial Growth

et al. 2008

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A high-precision RT-CVD epitaxial growth technique has been successfully developed for fabricating ultra-low-power SiGe HBTs. Extremely high-concentration doping with abrupt profiles in the Si/SiGe layers was achieved without hightemperature activation annealing. Furthermore, good crystallinity of the grown layer was also achieved, which results in low resistivity. A major advantage of the technique is that SiGe HBTs fabricated using it have high cutoff frequencies at low current density (50 GHz at J C = 0.2 mA/ m 2 ), which makes them highly suitable devices for use in future low-power high-speed communication systems.

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Section: Introductionmentioning

confidence: 99%

Ultra-Low-Power SiGe HBTs using High-Precision RT-CVD Epitaxial Growth

et al. 2008

View full text Add to dashboard Cite

show abstract

“…Silicon germanium (SiGe) heterojunction bipolar transistors (HBTs) are promising candidates for the realization of ultra-high-speed communication systems using wide-bandwidth microwaves and millimeter waves [1]. To obtain higher operation speeds and lower power consumption levels, base width and emitterbase/collector-base capacitances must be reduced simultaneously.…”

mentioning

confidence: 99%