12‐2: Development of Top‐Gate Oxide TFTs for Plastic‐Film LCDs

Abstract

A thin-film-transistor (TFT) technology for plastic-film liquid crystal displays (LCDs) was developed herein. Top-gate oxideTFTs with channel lengths L  2 and 3 m were fabricated on a transparent polyimide layer at approximately 300C using Generation 4.5 mother glass. The desirable performance and reliability of the TFTs were obtained.

45‐2: Distinguished Paper: Ultra‐narrow Border Display with a Cover Glass Using LCDs with a Polyimide Substrate

“…We compared two structures, as shown in Figures 5(a) and (b). The inorganic layers, such as the insulator for the thin film transistor (TFT) and the barrier layers for controlling the stress of the PI substrates [7] and blocking moisture, were removed from the bending position to prevent from cracking. For the structure in Figure 5(a), the bending position is located at the liquid crystal layer.…”

“…Our group has developed an in-plane-switching LCD (IPS-LCD) fabricated on a plastic substrate; this novel technology, termed a sheet LCD, is extremely thin and light [5][6][7]. A transparent polyimide (PI) is applied as the substrate of the sheet LCD.…”

39‐2: Development of Advanced LTPS TFT Technology for Low Power Consumption and Narrow Border LCDs

“…The deposition condition of the gate insulator was investigated for improving reliability of the oxide TFTs. After patterning of the gate metal for oxide TFTs, ion implantation was carried out through the gate insulator to form source and drain regions [4].…”

Development of high mobility top gate IGZO-TFT for Automotive OLED display.

“…Besides these, it is possible to increase the on current by thinning the GI and the shorter length of TFT than the CE structure. Because of these advantages, top gate structure TFT has been studied intensively in many development institution [3][4] [5]. Reliability is also an important issue for oxide TFT for self-luminous displays.…”