2019
DOI: 10.36463/idw.2019.0468
|View full text |Cite
|
Sign up to set email alerts
|

Development of high mobility top gate IGZO-TFT for Automotive OLED display.

Abstract: We report the high performance top gate IGZO-TFT for OLED display. By optimizing the conditions of process, we fabricated the transistor with mobility from 7 to 32 cm 2 /Vs with enhanced threshold voltage. They also have reliability PBT/NBT enough to use application. Finally, the prototype 12.3" ultrawide flexible OLED display was successfully demonstrated.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
6
0

Year Published

2020
2020
2021
2021

Publication Types

Select...
5

Relationship

3
2

Authors

Journals

citations
Cited by 5 publications
(6 citation statements)
references
References 7 publications
0
6
0
Order By: Relevance
“…We have adopted IGZO TFTs with both top and bottom gate (double gate) to enhance its on current. Previously, we have reported top-gate IGZO (TG-IGZO) fabrication process [4]. This time we have added bottom gate layer under the TG-IGZO structure to form double gate structure.…”
Section: Igzo and N-ltps Tft Fabrication Processmentioning
confidence: 99%
See 1 more Smart Citation
“…We have adopted IGZO TFTs with both top and bottom gate (double gate) to enhance its on current. Previously, we have reported top-gate IGZO (TG-IGZO) fabrication process [4]. This time we have added bottom gate layer under the TG-IGZO structure to form double gate structure.…”
Section: Igzo and N-ltps Tft Fabrication Processmentioning
confidence: 99%
“…SHARP Corp. started mass production of the IGZO-LCDs in 2012 for the first time in the world [3]. Since then, we have improved the mobility by 1.5 times higher and evolved the IGZO generation aiming to expand the range of IGZO technology application as an alternative to LTPS [4]. Figure 1 shows the Hall mobility of different IGZO films as a function of the carrier concentration.…”
Section: Introductionmentioning
confidence: 99%
“…The source and drain electrodes, and the contact holes of the LTPS and IGZO TFTs are formed simultaneously. The top gate insulator (TGI) of the IGZO was formed by the plasma enhanced chemical vapor deposition (PECVD) method and carefully optimized for improving IGZO TFTs electrical properties and the reliability [14].…”
Section: Tft Structurementioning
confidence: 99%
“…IGZO is a compound of Indium (In), Gallium (Ga), Zinc (Zn), and Oxide (O). When IGZO is used for TFT, it allows low current leakage when the transistor is off and has a fast response speed [7].…”
Section: Advantages Of Igzo-tftmentioning
confidence: 99%