IGZO TFT with the same on current as n-LTPS was fabricated. The saturation on current reached 1 mA, and the off-state leakage current was below 1 pA. The Vth shift under PBT / NBT stress test for the IGZO TFT was 0.1 / 0.1 V, respectively, which was better compared to the n-LTPS. Furthermore, the IGZO TFT showed an ideal Id-Vd curve (output characteristics) without any kinks. These results indicate that, a variety of backplanes, from small size smartphones to large area TVs, are possible to be made in a single factory of IGZO.