Suppression of B outdiffusion by C incorporation in ultra-high-speed SiGeC HBTs

Oda, Katsuya; Suzumura, Isao; Miura, Makoto; Ohue, E.; Hayami, R.; Kodama, A.; Shimamoto, H.; Washio, Katsuyoshi

doi:10.7567/ssdm.2002.e-3-2

Cited by 2 publications

(4 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Epitaxial growth of SiGe HBT structures was carried out using a cold-wall rapid thermal chemical vapor deposition (RT-CVD) system that can be operated in either UHV/CVD or LPCVD modes [2]. To achieve precise control of germanium and boron profiles in the base layer, boron-doped SiGe layers were epitaxially grown using the UHV/CVD mode.…”

Section: Methodsmentioning

confidence: 99%

“…To prevent dopant redistribution, surface cleaning prior to each epitaxial growth must be carried out at low temperature. Since our RT-CVD system utilizes a UHV transfer chamber and two growth chambers for n-type and p-type doping, the contamination during wafer transfer was minimized [2]. SIMS profiles of contaminant concentrations in a Si/SiGe multi-layer, which was fabricated using our technique, showed no contaminant peaks at the interface.…”

Section: Continuous Epitaxial Growthmentioning

confidence: 98%

“…Generally, the emitter is formed by thermal diffusion of an n-type dopant from highly doped poly-Si at high temperature. Low-temperature epitaxial growth of the emitter can reduce the thermal budget remarkably; thus, dopant profiles in HBTs are almost the same as those in as-grown layers [2]. Accordingly, in this current work, we have developed high-precision RT-CVD epitaxial growth technique to improve performances of ultra-low-power SiGe HBTs.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Ultra-Low-Power SiGe HBTs using High-Precision RT-CVD Epitaxial Growth

et al. 2008

View full text Add to dashboard Cite

A high-precision RT-CVD epitaxial growth technique has been successfully developed for fabricating ultra-low-power SiGe HBTs. Extremely high-concentration doping with abrupt profiles in the Si/SiGe layers was achieved without hightemperature activation annealing. Furthermore, good crystallinity of the grown layer was also achieved, which results in low resistivity. A major advantage of the technique is that SiGe HBTs fabricated using it have high cutoff frequencies at low current density (50 GHz at J C = 0.2 mA/ m 2 ), which makes them highly suitable devices for use in future low-power high-speed communication systems.

show abstract

Section: Methodsmentioning

confidence: 99%

Section: Continuous Epitaxial Growthmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Ultra-Low-Power SiGe HBTs using High-Precision RT-CVD Epitaxial Growth

et al. 2008

View full text Add to dashboard Cite

show abstract

“…In regards to the continuous-epitaxial-growth technology, cold-wall rapid thermal UHV/CVD (RT-UHV/CVD) equipment was used in both UHV/CVD mode and LPCVD mode (5). To precisely control germanium and boron profiles, a boron-doped SiGe base layer was formed in UHV/CVD mode.…”

Section: Device and Process Technologies Of Sige Hbtsmentioning

confidence: 99%

Bipolar Device and Circuit Technologies for Future Wireless Communications

et al. 2009

View full text Add to dashboard Cite

SiGe HBTs and their circuit technologies are suitable for future wireless communications. To achieve low 1/f-noise characteristics in RF applications, a SiGe HBT with a raised-emitter structure, fabricated by epitaxial growth of phosphorous-doped Si layers, was developed. Aimed at ultra-low power consumption in a wide range of microwave applications, a SiGe HBT fabricated by wellcontrolled SiGe/Si continuous epitaxial growth was developed. To improve the design process for Si-based RF-ICs, equivalent circuits for transmission lines under the slow-wave effect and for inductors under the peripheral ground effect were also demonstrated. Moreover, MMICs operating in the quasimillimeter-wave region, namely, a 24-GHz LNA, a 27-GHz VCO, and a 24-GHz mixer were developed. In regards to these MMICs, new circuit technologies, namely, inductive biasing, merged transformer matching, and pseudo-stacked configuration, were developed.

show abstract

Suppression of B outdiffusion by C incorporation in ultra-high-speed SiGeC HBTs

Cited by 2 publications

References 0 publications

Ultra-Low-Power SiGe HBTs using High-Precision RT-CVD Epitaxial Growth

Ultra-Low-Power SiGe HBTs using High-Precision RT-CVD Epitaxial Growth

Bipolar Device and Circuit Technologies for Future Wireless Communications

Contact Info

Product

Resources

About