Zn–In–Sn-O (ZITO) and In–Sn-O (ITO) thin films were deposited at room temperature on poly(ether sulfone) (PES) substrates using a combinatorial rf magnetron co-sputtering system. The cationic contents of the films were varied using a compositionally combinatorial technique. The average optical transmittance of the ZITO films was >80% in the visible region. The ZITO films showed an amorphous phase regardless of the zinc content. A minimum resistivity of 4.1×10-4 Ω·cm was obtained at a zinc content of 8.9 at. % [Zn/(In + Zn + Sn)]. The amorphous ZITO films deposited on flexible substrates had good mechanical durability against external dynamic stress, as measured using a bending test. Overall, the characteristics of the ZITO films were comparable or superior to those of the amorphous ITO films, and thus ZITO films may serve as a viable, low-cost alternative for electrode applications in flexible organic light-emitting diodes or organic solar cells.
Zn–In–Sn-O (ZITO) and ITO thin films were fabricated on flexible poly(ether sulfone) (PES) substrates by RF magnetron cosputtering. The bending stability of the films was investigated by employing a dynamic bending tester and monitoring the resistance change (ΔR) of the films. The resistance of the polycrystalline ITO films increased more than eightfold after 600 cycles of dynamic bending, while the resistance of the amorphous ZITO thin films remained constant. Internal stress measurements and microscopic images revealed that the significant increase in the resistance of the polycrystalline ITO films was mainly attributed to the large compressive stress of the polycrystalline ITO films and the large quantity of cracks or delaminations generated as the films were bent, while the amorphous ZITO films remained substantially intact. These results showed that the amorphous ZITO thin films had high mechanical durability against external dynamic stress and the possible application of flexible optoelectronic devices.
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