Deposition of Amorphous Zinc Indium Tin Oxide and Indium Tin Oxide Films on Flexible Poly(ether sulfone) Substrate Using RF Magnetron Co-sputtering System

Heo, Gi-Seok; Matsumoto, Yuji; Gim, In-Gi; Park, Jongwoon; Kim, Gwang-Young; Kim, Tae−Won

doi:10.1143/jjap.49.035801

Cited by 10 publications

(7 citation statements)

References 19 publications

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“…The TFT uses a high-mobility channel material with a composition of In-Sn-Zn-O (ITZO). ITZO has been investigated as a candidate channel material for the backplane of AMOLED displays, [6][7][8][9] but the composition was optimized to realize higher mobility and higher reliability.…”

Section: Introductionmentioning

confidence: 99%

High‐mobility oxide TFT for circuit integration of AMOLEDs

Fukumoto¹,

Arai²,

Morosawa³

et al. 2011

J Soc Info Display

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Abstract— A high‐mobility and high‐reliability oxide thin‐film transistor (TFT) that uses In‐Sn‐Zn‐O (ITZO) as a channel material has been developed. The mobility was 30.9 cm2/V‐sec and the threshold voltage shift after 20,000 sec of a bias‐temperature‐stress (BTS) test (with a stress condition of Vg = 15 V, Vd = 15 V, and T = 50°C) was smaller than 0.1 V. In addition, a method of obtaining a stable enhancement‐type TFT, which realizes circuit integration for active‐matrix organic light‐emitting diode (AMOLED) displays has been developed.

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Section: Introductionmentioning

confidence: 99%

High‐mobility oxide TFT for circuit integration of AMOLEDs

Fukumoto¹,

Arai²,

Morosawa³

et al. 2011

J Soc Info Display

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“…202 The samples were deposited from a pure ZnO target and an In 2 O 3 target doped with 10 wt. % Sn.…”

mentioning

confidence: 99%

Applications of high throughput (combinatorial) methodologies to electronic, magnetic, optical, and energy-related materials

Green

Takeuchi

Hattrick‐Simpers

2013

Journal of Applied Physics

223

189

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High throughput (combinatorial) materials science methodology is a relatively new research paradigm that offers the promise of rapid and efficient materials screening, optimization, and discovery. The paradigm started in the pharmaceutical industry but was rapidly adopted to accelerate materials research in a wide variety of areas. High throughput experiments are characterized by synthesis of a "library" sample that contains the materials variation of interest (typically composition), and rapid and localized measurement schemes that result in massive data sets. Because the data are collected at the same time on the same "library" sample, they can be highly uniform with respect to fixed processing parameters. This article critically reviews the literature pertaining to applications of combinatorial materials science for electronic, magnetic, optical, and energy-related materials. It is expected that high throughput methodologies will facilitate commercialization of novel materials for these critically important applications. Despite the overwhelming evidence presented in this paper that high throughput studies can effectively inform commercial practice, in our perception, it remains an underutilized research and development tool. Part of this perception may be due to the inaccessibility of proprietary industrial research and development practices, but clearly the initial cost and availability of high throughput laboratory equipment plays a role. Combinatorial materials science has traditionally been focused on materials discovery, screening, and optimization to combat the extremely high cost and long development times for new materials and their introduction into commerce. Going forward, combinatorial materials science will also be driven by other needs such as materials substitution and experimental verification of materials properties predicted by modeling and simulation, which have recently received much attention with the advent of the Materials Genome Initiative. Thus, the challenge for combinatorial methodology will be the effective coupling of synthesis, characterization and theory, and the ability to rapidly manage large amounts of data in a variety of formats. V C 2013 AIP Publishing LLC. [http://dx

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“…This ZITO crystallization was similar to an amorphous structure of previous literature that may be applied in transistors. 12) Although this ZITO crystallization possessed an amorphous characteristic, but its electrical properties was not suitable for active layer of transistors (Table 1). To achieve the semiconductor characteristic, the ZITO film contained 69 at% of Zn (RF power: 80 W, DC power: 30 W) was selected to adjust the resistivity under the different oxygen concentrations.…”

Section: Structural and Electrical Characteristics Of Zitomentioning

confidence: 99%

Characteristics of Thin-Film-Transistors Based on Zn–In–Sn–O Thin Films Prepared by Co-Sputtering System

et al. 2012

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This study presents the growth of ZITO film by co-sputtering system. By adjusting the chemical composition and electrical properties of ZITO, an amorphous ZITO (a-ZITO) matrix with a semiconducting character was used to apply in active layer for thin-film transistors (TFTs) device. The proposed a-ZITO channel layer with SiN x dielectric layer exhibited depletion mode operation. The device exhibited a subthreshold swing (SS) of 1.65 V/dec, a field-effect mobility (® FE ) of 2.57 cm 2 V ¹1 s ¹1, and an on/off current ratio (I on /I off ) of 10 4 . The small SS and an acceptable ® FE were associated with a smaller roughness and stable composition of ZITO channel layer.

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Deposition of Amorphous Zinc Indium Tin Oxide and Indium Tin Oxide Films on Flexible Poly(ether sulfone) Substrate Using RF Magnetron Co-sputtering System

Cited by 10 publications

References 19 publications

High‐mobility oxide TFT for circuit integration of AMOLEDs

High‐mobility oxide TFT for circuit integration of AMOLEDs

Applications of high throughput (combinatorial) methodologies to electronic, magnetic, optical, and energy-related materials

Characteristics of Thin-Film-Transistors Based on Zn–In–Sn–O Thin Films Prepared by Co-Sputtering System

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Deposition of Amorphous Zinc Indium Tin Oxide and Indium Tin Oxide Films on Flexible Poly(ether sulfone) Substrate Using RF Magnetron Co-sputtering System

Cited by 10 publications

References 19 publications

High‐mobility oxide TFT for circuit integration of AMOLEDs

High‐mobility oxide TFT for circuit integration of AMOLEDs

Applications of high throughput (combinatorial) methodologies to electronic, magnetic, optical, and energy-related materials

Characteristics of Thin-Film-Transistors Based on Zn&ndash;In&ndash;Sn&ndash;O Thin Films Prepared by Co-Sputtering System

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Characteristics of Thin-Film-Transistors Based on Zn–In–Sn–O Thin Films Prepared by Co-Sputtering System