Un-doped and indium (0-9 at.%) doped ZnO nanoparticles were prepared by the sol-gel method. The nanoparticles were heated at 700 degrees C-800 degrees C for 1 hour in air and then analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray (EDS), Raman spectra and photoluminescence (PL). The results were compared to investigate the structural characteristics and physical properties. XRD patterns of the Indium-doped ZnO (IZO) nanoparticles were similar to those of the ZnO nanoparticles. Notably, the crystalline quality of the ZnO nanoparticles had reduced with increasing the concentration of indium doping. The In2O3 phase of IZO and the crystallized structures affected the UV emission band and the green emission band of PL. The Indium-doped (5 at.% - 7 at.%) ZnO nanoparticles possessed higher crystalline quality and better optical properties.
Silver film is widely used in optoelectronic and semiconductor industries, but its stress problem has not been verified. Sputtered Ag films of different thicknesses were used to investigate the effect of the crystallization on their solidification residual stress and electrical properties. From XRD data (2ª > 90°), an increase the thickness of the Ag film from 30 to 400 nm, not only raised the index of crystallization, but also obtained a lower resistivity. However, the peak (331) had a dissolution tendency due to the residual stress. The grain size of Ag films with greater thickness had grown because of the longer sputtering duration. Due to variations in the crystallized texture, the 30 and 110 nm films showed no sign of elasticity under nano-indentation testing. Under low-energy XRD (30 kV-20 µA), the 30 nm film not only had more residual stress, but also formed a new plane of diffraction at 104.2°of 2ª and the actual compressive stress value was 14.94 MPa. After an electrical current induced crystallization (EIC) test, the resistivity and residual stress of Ag film were improved.
This study presents a successful bias crystallization mechanism (BCM) based on an indium/glass substrate and applies it to fabrication of ZnInSnO (ZITO) transparent conductive oxide (TCO) films. The effects of bias-crystallization on electrical and structural properties of ZITO/In structure indicate that the current-induced Joule heating and interface diffusion were critical factors for low-temperature crystallization. With biases of 4 V and 0.1 A, the resistivity of the ZITO film was reduced from3.08×10−4 Ω∗cm to6.3×10−5 Ω∗cm. This reduction was attributed to the bias-induced energy, which caused indium atoms to diffuse into the ZITO matrix. This effectuated crystallizing the amorphous ZITO (a-ZITO) matrix at a lower temperature (approximately170∘C) for a short period (≤20 min) during a bias test. The low-temperature BCM developed for this study obtained an efficient conventional annealed treatment (higher temperature), possessed energy-saving and speed advantages, and can be considered a candidate for application in photoelectric industries.
This study presents the growth of ZITO film by co-sputtering system. By adjusting the chemical composition and electrical properties of ZITO, an amorphous ZITO (a-ZITO) matrix with a semiconducting character was used to apply in active layer for thin-film transistors (TFTs) device. The proposed a-ZITO channel layer with SiN x dielectric layer exhibited depletion mode operation. The device exhibited a subthreshold swing (SS) of 1.65 V/dec, a field-effect mobility (® FE ) of 2.57 cm 2 V ¹1 s
¹1, and an on/off current ratio (I on /I off ) of 10 4 . The small SS and an acceptable ® FE were associated with a smaller roughness and stable composition of ZITO channel layer.
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