Microstructures, optical and electrical properties of In-doped ZnO thin films prepared by sol–gel method

Chen, K. J.; Hung, Fei-Yi; Chang, Shoou‐Jinn; Hu, Zheng

doi:10.1016/j.apsusc.2009.02.007

Cited by 91 publications

(42 citation statements)

References 26 publications

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“…The result was similar to the metal doping mechanism in our previous report. 24) Based on above results, it confirmed that the reduction of film resistivity was attributed to the bias-induced indium diffusion. And the ZITO/In crystallization was influenced by the formation of In 2 O 3 structure.…”

Section: Resultssupporting

confidence: 68%

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The Bias-Crystallization Mechanism on Structural Characteristics and Electrical Properties of Zn-In-Sn-O Film

et al. 2011

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The Zn-In-Sn-O (ZITO) transparent conductive oxide (TCO) films were deposited onto indium/glass substrate by co-sputtering system. The bias-crystallization mechanism (BCM) was used to promote the quality of ZITO films. After biasing treatment (biased at 4 V for 20 min), the resistivity of ZITO film reduced from 3:08 Â 10 À4 Ãcm to 6:3 Â 10 À5 Ãcm. This reduction was attributed to the indium ions diffused into ZITO film using BCM. According to the Joule's law and Ohm's law, the required energy of biasing treatment was only 480 Joule. Comparing with traditional annealed treatment (annealing at 500 C for 20 min in vacuum required 9:8 Â 10 6 Joule), BCM had improved the conductivity of ZITO film in a short time at room temperature and possessed an excellent competitiveness of cost.

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Section: Resultssupporting

confidence: 68%

“…Due to micro SnO x phases combined with In 2 O 3 phases easily, some tin ions had diffused from interface region into ZITO matrix. 21,24) Briefly, the variation of elements in the surface and interface region was attributed to diffusion of atoms of BCM. These mechanisms mainly caused the indium atoms to diffuse into ZITO film (Fig.…”

Section: Resultsmentioning

confidence: 99%

The Bias-Crystallization Mechanism on Structural Characteristics and Electrical Properties of Zn-In-Sn-O Film

et al. 2011

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“…The UV emission band is originated from the free exciton recombination. The enhancement of PL intensity by doping with 1 at.% of Al can be attributed to the improvement of the crystallinity as observed from XRD patterns and also to the charge compensation due to the presence of Al (Anandhi et al 2013).The increase in the intensity of NBE emission observed for pure ZnO and 1 at.% Al-doped ZnO films originates from lesser defects or/and preferred orientation along (002) (Chen et al 2009). The decrease in PL intensity for Al concentrations above 2 at.% reflects a possible lattice distortion or the formation of new phases (small amount of impurities that cannot be detected within the resolution of the X-ray diffractometer) due to higher Al doping (He et al 2010).…”

Section: Optical Propertiesmentioning

confidence: 83%

Characterization and study of antibacterial activity of spray pyrolysed ZnO:Al thin films

et al. 2015

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Aluminum-doped zinc oxide (ZnO:Al) thin films were deposited onto glass substrates using spray pyrolysis technique with the substrate temperature of 400°C. X-ray diffraction analysis indicated that the films were polycrystalline with hexagonal wurtzite structure preferentially oriented along (002) direction. Surface morphology of the films obtained by scanning electron microscopy showed that the grains were of nanoscale size with porous nature for 6 at.% of Al. Atomic force microscopy observations revealed that the particles size and surface roughness of the films decreased with Al-doping. Optical measurements indicated that ZnO:Al (6 at.%) exhibited a band gap of 3.11 eV, which is lower than that of pure ZnO film, i.e. 3.42 eV. Photoluminescence analysis showed weak NBE emission at 396 nm for Al-doped films. The low resistivity, high hall mobility and carrier concentration values were obtained at a doping ratio of 6 at.% of Al. The effective incorporation of 6 at.% of Al into ZnO lattice by occupying Zn sites yielded a well-pronounced antibacterial activity against Staphylococcus aureus.

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“…The electrical resistivity of the films was measured using the Hall effect measurement at room temperature with indium ohmic contacts. 14,15) Testing process of Hall effect, the voltage and the current were constant. Therefore, the electrical resistivity and Hall coefficient could be measured.…”

Section: Methodsmentioning

confidence: 99%

Crystallization Mechanism and Raman Characteristics of ZnO/In/ZnO Thin Film Using an Electrical Current Method

Hung

2011

Mater. Trans.

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ZnO/In/ZnO tri-layer thin films were designed and fabricated by RF sputtering on copolymer substrate. Under an electrical current, the thermoelectric effect of direct current (DC) reduced the electrical resistance and improved the crystallization and Raman properties. Also, indium atoms had migrated into the ZnO matrix and a diffusion layer in the ZnO/In interface had grown. The electrical current induced temperature is $140C and the copolymer substrate suffers no damage and so can be applied to the low temperature optoelectronic devices.

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Microstructures, optical and electrical properties of In-doped ZnO thin films prepared by sol–gel method

Cited by 91 publications

References 26 publications

The Bias-Crystallization Mechanism on Structural Characteristics and Electrical Properties of Zn-In-Sn-O Film

The Bias-Crystallization Mechanism on Structural Characteristics and Electrical Properties of Zn-In-Sn-O Film

Characterization and study of antibacterial activity of spray pyrolysed ZnO:Al thin films

Crystallization Mechanism and Raman Characteristics of ZnO/In/ZnO Thin Film Using an Electrical Current Method

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