We investigate the photoluminescence (PL) properties of a thick InGaN single quantum well (SQW) in which an AlGaN δ layer is embedded. The δ layer offers an extra degree of freedom which may be employed to tune the emission wavelength. One of the most salient features of such a QW structure is that the long-wavelength tuning is feasible with lower indium composition. The δ layer also increases the wave function overlap between holes and electrons, shortening the PL lifetime. All the measurement results are consistent with the numerical predictions. The QW structure could be of great importance in the design of long-wavelength lasers.
Optical gain characteristics of InGaN∕GaN double quantum well (QW) structures with embedded AlGaN δ layer are investigated using the multiband effective mass theory. These results are compared with those of single QW structure without a δ layer. The theoretical energies show very good agreement with the experimental results for both single and double QW structures. The inclusion effect of a δ layer is found to be dominant at a relatively low carrier density. A double QW structure has larger optical gain than the single QW structure, in particular, at higher carrier density.
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