Effects of substrate temperature on properties of ITO–ZnO composition spread films fabricated by combinatorial RF magnetron sputtering

Heo, Gi-Seok; Gim, In-Gi; Park, Jongwoon; Kim, Kwang-Young; Kim, Tae−Won

doi:10.1016/j.jssc.2009.07.025

Cited by 27 publications

(20 citation statements)

References 15 publications

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“…6,12,22 Therefore, careful engineering of materials made up of these elements with conduction s orbitals 14,23 can render them useful materials for TCOs applications. 26,33,[36][37][38][39][40][41] All IZTO films show optical transmittance over 80% in the visible region, indicating the comparable to or greater optoelectronic properties than that of the commercial ITO. 3,9,[23][24][25][26][27][28][29][30][31][32] The constituent compounds of IZTO, namely, ZnO and SnO 2 , have already been estimated to have low solubility in In 2 O 3 isolatedly, for example, 6 cation% for SnO 2 and o1 wt% for ZnO, respectively.…”

Section: Introductionmentioning

confidence: 99%

How does the multiple constituent affect the carrier generation and charge transport in multicomponent TCOs of In–Zn–Sn oxide

Yang

Ling

et al. 2015

J. Mater. Chem. C

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The main purpose of this work is to make clear that in the newly synthesized multicomponent materials IZTO, namely, Sn/Zn cosubstituted In 2 O 3 , how can these cosubstituted dopants interact with each other and affect the electronic properties. We carry out a series of systematic Density Functional Theory calculations. Compared with ITO materials, the existence of Zn 2+ in IZTO is important for the control of the electronic properties. Although there is large lattice distortion in the local structure around Zn 2+ due to the Jahn-Teller effect, it releases distortions induced by other defects and thus reduces the formation energy of cosubstitution of the Zn/Sn impurity pair in In 2 O 3 . The V O defect prefers to form in the ZnO 6 octahedron for the breaking of the Zn-O bond is easier than the Sn-O bond, which generates free electrons. In all IZTO configurations with and without defects, the bottom of conduction bands is comprised mainly of cation-s and O-p orbitals, which constructs a three dimensional network for charge transport. The bandstructure renormalization effect exerted by Zn atoms narrows the band gap. The existence of Zn atoms, on the one hand, weakens the spatial localization and orbital localization effects induced by defects and on the other hand strengthens the charge transport ability. These results indicate that the multicomponent semiconductor IZTO is an excellent candidate for the low indium content TCOs. Our work is useful to control the physical properties of IZTO experimentally, and is also helpful in understanding other multicomponent TCO materials.

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Section: Introductionmentioning

confidence: 99%

How does the multiple constituent affect the carrier generation and charge transport in multicomponent TCOs of In–Zn–Sn oxide

Yang

Ling

et al. 2015

J. Mater. Chem. C

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“…Zinc oxide nanostructures are extensively studied in the literature for its interesting photoconducting [6], electrical [7] and optical properties [8]. In addition, crucial role played by Zn(II) in pure ZnO and its mixed oxides in heterogeneous catalysis makes many organic reactions feasible.…”

Section: Introductionmentioning

confidence: 99%

Highly ordered Zn-doped mesoporous silica: An efficient catalyst for transesterification reaction

Pal

Paul

Bhaumik

2011

Journal of Solid State Chemistry

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“…The sputter guns are located at these locations to yield a thickness gradient in the deposited films and therefore produce a compositionally spread film when co-sputtered from both guns at the same time. 8 gases, and the Ar and O 2 gas flow rates were maintained at 24.8 sccm and 0.2 sccm, respectively. The process pressure was 0.17 Pa and the substrate temperature was room temperature.…”

Section: Methodsmentioning

confidence: 99%

Effect of Zinc Content on the Refractive Index of Co-Sputtered Zn-Doped ITO Films

Jun

Heo²,

Park³

et al. 2011

J. Nanosci. Nanotech.

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In this study, we investigated the possibility of using Zn-doped ITO film as an alternative material for conventional SiO2 waveguides used in optical communication. The Zn-doped ITO films were deposited on quartz substrates using a combinatorial sputtering system, which yielded composition spread Zn-In-Sn-O (ZITO) films by co-sputtering two targets of ITO and ZnO. The Zn-doped ITO films deposited at room temperature exhibited an amorphous phase in the Zn content [Zn/(Zn+In+Sn)] range of 39-54 at%. The Zn-doped ITO films deposited at low oxygen partial pressure showed resistivity below 10(-3) ohms cm and optical transmittance of approximately 85% at 550 nm. The refractive index calculated by the Swanepoel method was found to be dependent on the Zn content in the Zn-doped ITO films. The calculated bending loss from the refractive index indicated that Zn-doped ITO could be utilized as a new waveguide material for various optical devices, such as optical splitters, wavelength division multiplexers (WDMs), optical modulators, and optical switches.

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Effects of substrate temperature on properties of ITO–ZnO composition spread films fabricated by combinatorial RF magnetron sputtering

Cited by 27 publications

References 15 publications

How does the multiple constituent affect the carrier generation and charge transport in multicomponent TCOs of In–Zn–Sn oxide

How does the multiple constituent affect the carrier generation and charge transport in multicomponent TCOs of In–Zn–Sn oxide

Highly ordered Zn-doped mesoporous silica: An efficient catalyst for transesterification reaction

Effect of Zinc Content on the Refractive Index of Co-Sputtered Zn-Doped ITO Films

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