A systematic comparison of Flipped Voltage Followers circuits is presented. Two new versions of the flipped voltage follower are introduced. They are characterized by very low output impedance, high bandwidth speed, wide signal swing . All structures can be easily modified for class AB operation . Simulation results show that the newly introduced structures have optimal characteristics.
A new configuration of the flipped voltage follower (FVF) offering class-AB operation is presented. The idea uses a bulk-driven transistor instead of the constant current source of the typical FVF topology. This feature enhances the sourcing capability for class-AB operation and the symmetrical slew rate. The key element is changing the basic structure of the original FVF circuit with no additional devices. A detailed analysis of the circuit and simulations using Spice are presented. The experimental results from a manufactured circuit prototype using CMOS 0.35 μm technology demonstrate the feasibility of the proposal.
This letter details a novel floating-bulk transistor technique for low-voltage design. The approach is derived from two previous wellknown techniques: bulk-driven and quasi floating-gate. The floating-bulk technique uses an input capacitive coupling through a floating bulk of a PMOS allowing modulation of the drain current. A fabricated commonsource amplifier was tested on CMOS 0.5 µm technology and the feasibility of the proposal was demonstrated.
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