Oxidation-enhanced diffusion of phosphorus, arsenic, and boron and oxidation-reduced diffusion of antimony in silicon have been studied as a function of oxidation time. Data for the early phase of oxidation in dry oxygen from 5 to 60 min have been obtained. Oxidation-enhanced diffusivities show a steady decrease with decreasing oxidation rate for phosphorus, arsenic, and boron, with enhancements at long oxidation times in agreement with previously reported results. Antimony shows a reduction in diffusivity during oxidation. A model allowing calculation of diffusivity enhancement or reduction for all elements and oxidation times has been developed. The present data support the theory of a dual vacancy-interstitialcy diffusion mechanism for all the elements studied. The fraction of interstitialcy diffusion fI has been calculated, yielding fI=0.38 for phosphorus at 1000 °C, fI=0.30 for boron at 1000 °C, fI=0.35 for arsenic at 1090 °C, and fI=0.015 for antimony at 1100 °C. It has also been shown that the oxidation-induced supersaturation of self-interstitials is accompanied by an undersaturation of vacancies during oxidation. This undersaturation can be explained by a rate-limited bimolecular annihilation mechanism. This theory yields, for the first time, values for the vacancy-interstitial recombination-limited intrinsic vacancy lifetime in silicon under near-equilibrium conditions at high temperature; it also indicates the presence of an energy barrier to this recombination of the order of 1.4 eV.
The diffusion of indium in silicon at 1000 °C has been measured in inert (dry nitrogen) and oxidizing (dry oxygen) ambients. It was found that, similarly to phosphorous, boron, and arsenic, indium experiences significant oxidation-enhanced diffusion. This result indicates that indium, like the other elements mentioned above, diffuses in silicon by a mixed interstitialcy and vacancy mechanism. It was also found that indium, similarly to gallium, segregates readily and diffuses rapidly in thermal silicon dioxide.
The properties of thin (350 Å) Ti layers deposited on Si0.89Ge0.11 layers epitaxially grown on Si(001) were studied as a function of isochronal (30 min.) thermal treatments in the temperature range Ta=550–800°C. Both as-deposited and annealed at Ta up to 750°C Schottky diodes revealed near-ideal I–V and C–V characteristics with the same flat-band barrier height eV. The results indicate that at these Ta the Fermi level is pinned with respect to the conduction band.Annealing at 800°C resulted in an improvement of the Schottky diodes quality and a drop in and the series resistance Rs of the contacts. The values of the ideality factor n and ( measured were 1.03±0.02 and 0.56±0.007 eV, correspondingly. The electrical parameters of these metal/semiconductor contacts were correlated with the dynamics of interfacial reactions due to the applied heat-treatments.
The resistance of thin diamondlike carbon (DLC) films to anodic breakdown in aqueous electrolytes was investigated using voltammetry. The films were less than 0.5 mm thick and were deposited on type 301 stainless steel substrates using plasma-assisted chemical vapor deposition (PACVD) from either methane, acetylene, or 1,3-butadiene precursors with argon or hydrogen as diluent. A 10 nm thick polysilicon (PS) film was plasma-deposited prior to DLC film deposition to improve adhesion. The electrolytes used for corrosion testing were mixtures of 0.1 M NaCl and 0.1 M Na 2 SO 4 and 0.1 M HCl and 0.1 M Na 2 SO 4 in de-ionized water. The measured anodic current was lowest for the films deposited from butadiene and highest for those deposited from methane. The anodic current also increased with an increase in the hydrogen content in the feed gas mixture. In addition, the DLC films deposited at higher gas flow rates offered more resistance to anodic dissolution than those deposited at lower gas flow rates. Annealing improved the film performance. There appears to be an optimum DLC film thickness which provides the maximum resistance to anodic dissolution. In the best case, the DLC films reduced the anodic dissolution of bare stainless steel by about 4 orders of magnitude in the passive region. Atomic force microscopy studies of coated and uncoated stainless steel showed that the DLC films conformed to the steel substrate surface and had no effect on surface roughness, while DLC coated silicon substrates showed no evidence of pores.
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