Physical properties of a-Si:C:H films, including composition, optical constants, microhardness, and surface energy, were investigated. A factorial experimental design was employed to establish the effects of plasma-assisted chemical vapor deposition parameters on the physical properties of the films. The dynamics of the plasma deposition process are discussed in relation to the interactions observed among the process variables and the effects of the variables on the physical properties of the films.
II. EXPERIMENTAL
A. Film depositionSilicon-containing diamondlike carbon (DLC) films were deposited by plasma-assisted chemical vapor deposition (PACVD) on 〈001〉-silicon wafers from a combination of acetylene (Ac) and tetramethylsilane (TMS) precursor gases diluted with argon. A capacitively-coupled, parallel plate plasma reactor operating at 13.56 MHz was used for deposition. The substrates were placed on the powered (bottom) electrode. Details of the deposition process and equipment were published elsewhere. 16
B. Experimental designThe experiment was designed according to a two-level factorial model. 20 The two-level factorial design allows the effects of many variables to be studied in a single set