Diffusion of indium in silicon inert and oxidizing ambients

Antoniadis, D.A.; Moskowitz, I.

doi:10.1063/1.330394

Cited by 64 publications

(13 citation statements)

References 5 publications

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“…This ordering is presumed to hold under intrinsic doping conditions for temperatures where diffusion of profiles can be observed (typically, T~900'C). In addition, although not as well studied, the p-type dopants from column III (Al, Ga', and In) appear to have f"t values comparable to 8 and P Higuchi, 1982c, 1982d;Antoniadis and Moskowitz, 1982b).…”

Section: Stripe Nidthmentioning

confidence: 84%

Point defects and dopant diffusion in silicon

1989

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Diffusion in silicon of elements from columns III and V of the Periodic Table is reviewed in theory and experiment. The emphasis is on the interactions of these substitutional dopants with point defects {vacancies and interstitials) as part of their diffusion mechanisms. The goal of this paper is to unify available experimental observations within the framework of a set of physical models that can be utilized in computer simulations to predict diffusion processes in silicon. The authors assess the present state of experimental data for basic parameters such as point-defect diffusivities and equilibrium concentrations and address a number of questions regarding the mechanisms of dopant diffusion. They offer illustrative examples of ways that diffusion may be modeled in one and two dimensions by solving continuity equations for point defects and dopants. Outstanding questions and inadequacies in existing formulations are identified by comparing computer simulations with experimental results. A summary of the progress made in this field in recent years and of directions future research may take is presented.

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Section: Stripe Nidthmentioning

confidence: 84%

Point defects and dopant diffusion in silicon

1989

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“…Diffusion of In to interstitial sites in the zinc-blende structure 30,31 is another process which might be considered as a possible mechanism to explain the EDY splitting. Yet such a phenomenon should only have a minor effect, considering the low concentration of interstitial defects in the crystal.…”

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confidence: 99%

Structure of droplet-epitaxy-grown InAs/GaAs quantum dots

Cohen

Yochelis

Westreich

et al. 2011

Applied Physics Letters

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We have used a direct x-ray phasing method, coherent Bragg rod analysis, to obtain sub-angstrom resolution electron density maps of the InAs/GaAs dot system. The dots were grown by the droplet heteroepitaxy ͑DHE͒ technique and their structural and compositional properties are compared with those of dots grown by the strain-driven Stranski-Krastanov method. Our results show that the Ga diffusion into the DHE-grown dots is somewhat larger; however, other characteristics such as the composition of the dots' uppermost layers, the interlayer spacing, and the bowing of the atomic layers are similar.

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“…As a result, both the collector current and the transistor gain are expected to increase. This is because the electron transfer current flowing from the emitter to the collector is inversely proportional to the integrated hole concentration in the quasi-neutral base and is described by (2) where the symbols have their usual meanings [8]- [11]. However, gain enhancement that is achieved by using indium as the base dopant should not result in increased susceptibility to the base-width modulation (Early) effect that is caused by the reverse-biased collector-base junction.…”

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confidence: 99%

“…The acceptor states of indium (boron) lie 156 (48) meV above the silicon valence band. The ionized indium concentration is given by [2] (1)…”

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confidence: 99%

Silicon npn bipolar transistors with indium-implanted base regions

Kizilyalli¹,

Chen²,

Nagy³

et al. 1997

IEEE Electron Device Lett.

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In this paper, silicon npn bipolar transistors with indium-implanted base regions are discussed. Polysilicon emitter bipolar transistors are fabricated using a standard 0.5-m BIC-MOS process flow [1] where the base BF2 implant is replaced by an indium implant. In indium-implanted transistors, the integrated hole concentration (G b ) in the quasi-neutral base is reduced due to incomplete ionization of indium acceptor states. The novel utilization of this impurity freeze-out effect results in much increased collector currents and common-emitter transistor gains (h fe ) compared to boron-implanted transistors. Also, since indium acceptor states in depletion regions become fully ionized, the spreading of the reverse-biased collector-base junction depletion region into the transistor base (base-width modulation) is minimized. Hence, for indium base bipolar transistor an improved h fe -V A product is anticipated. Our first attempt at fabricating bipolar transistors with indium-implanted base regions resulted in devices with greatly increased collector current, impressive gains of h fe 1600, excellent collector current saturation characteristics, an Early Voltage of V A 10 V, h fe -V A product of 16 000 (implying an extended device design space), base-emitter breakdown voltages of BV EBO 9:6 V, and a cut-off frequency of ft = 17:8 GHz.

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Diffusion of indium in silicon inert and oxidizing ambients

Cited by 64 publications

References 5 publications

Point defects and dopant diffusion in silicon

Point defects and dopant diffusion in silicon

Structure of droplet-epitaxy-grown InAs/GaAs quantum dots

Silicon npn bipolar transistors with indium-implanted base regions

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