In this paper, we report on growth of ultraviolet light‐emitting diode (UV LED) heterostructures by hydride vapour phase epitaxy (HVPE) on sapphire substrates and results of the heterostructures characterization by X‐ray diffractometry, scanning electron microscopy, photo‐ and electroluminescence, micro‐photoluminescence, collected from the cleaved edges and the surface of the heterostructure with lateral resolution of about 1 µm. The heterostructures demonstrate efficient hole injection and low droop of the external quantum efficiency. Packaged 360 nm UV LED chips have wall‐plug efficiency of 1‐1.5%. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

In this paper, we present results on development of ultraviolet light‐emitting diodes (UV LEDs) based on GaN/AlGaN heterostructures grown on Al2O3 (0001) substrates by chloride‐hydride vapour phase epitaxy (CHVPE). Both packaged and unpackaged UV LED dies were fabricated. The peak wavelengths of dies were in the range of 360–365 nm with a typical FWHM of 10–13 nm. UV LEDs proved performance capability at current density up to 125 A/cm2. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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