Characterization of HVPE‐grown UV LED heterostructures

Kurin, S Yu; Antipov, Andrey; Barash, I. S.; Роенков, А. Д.; Usikov, A.; Helava, H.; Ратников, В. В.; Shmidt, N. M.; Сахаров, А. В.; Тарасов, С. А.; Menkovich, E A; Lamkin, I. A.; Папченко, Б. П.; Makarov, Yuri N.

doi:10.1002/pssc.201300459

Cited by 25 publications

(10 citation statements)

References 6 publications

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“…Details of the structures growth and characterization can be found elsewhere [6]. The structures grown were processed to form mesas and deposit contacts.…”

Section: Samples and Experimental Techniquesmentioning

confidence: 99%

Peculiarities of defect generation under injection current in LEDs based on group‐III nitride³N nanostructures

Shmidt¹,

Шабунина²,

Usikov

et al. 2015

Phys. Status Solidi C

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It has been demonstrated that, along with well‐known mechanisms of defect generation (DG) under injection current in fabricated UV‐ and commercial blue‐LED chips based on A3N nanostructures, other defect generation mechanisms are possible in local regions. Aging experiments performed simultaneously with analysis of evolution of I‐V characteristics at U < 2 V and spectral noise density dependences on current density, revealed DG with participation of multi‐phonon recombination of carriers in an extended defect system and local regions of random alloy fluctuations enriched by metallic atoms (Ga or In). (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Details of the structures growth and characterization can be found elsewhere [6]. The structures grown were processed to form mesas and deposit contacts.…”

Section: Samples and Experimental Techniquesmentioning

confidence: 99%

Peculiarities of defect generation under injection current in LEDs based on group‐III nitride³N nanostructures

Shmidt¹,

Шабунина²,

Usikov

et al. 2015

Phys. Status Solidi C

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“…AlxGa1-xN epitaxial layers were grown by hydride vapour phase epitaxy (HVPE) technique [8]. The top doped n-AlxGa1-xN layer had a carrier concentration of 10 16 cm -3 .…”

Section: Sample and Experemental Techniquementioning

confidence: 99%

Selective photodiodes for ultraviolet based on metal-AlGaN solid solutions

Lamkin

Evseenkov

Aglikov

2016

2016 IEEE NW Russia Young Researchers in Electrical and Electronic Engineering Conference (EIConRusNW)

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The structures based on Ag-AlGaN Schottky barriers have been manufactured. It allowed to realize photodetectors which have a long wavelength edge of photosensitivity less than 350 nm. The half-width was in a range of 15-40 nm depending on the Ag layer thickness varied from 15 to 150 nm. Selective photodetectors based on Au-AlGaN were obtained with the following parameters: half-width of 5-6 nm, 351-373 nm range of photosensitivity with a maximum at 355 nm, 362 nm, 366 nm and a sensitivity to 140 mA/W.

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“…The growth procedure included in-situ sapphire substrate treatment followed by multilayer structure growth. Details of the structures growth and characterization can be found elsewhere [8]. The structures grown were processed to form mesas and deposit contacts.…”

Section: Samples and Experimental Techniquesmentioning

confidence: 99%

Degradation of external quantum efficiency of AlGaN UV LEDs grown by hydride vapor phase epitaxy

Shmidt¹,

Usikov

Шабунина³

et al. 2015

physica status solidi c

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A comparative study of the degradation of HVPE‐grown 360 nm AlGaN/GaN UV and commercially available InGaN/GaN blue LED chips was performed. The common feature of the degradation of these two types of LEDs was found to be the increase of the conductivity of shunt paths under current injection. The paths (shunts) are localized in the extended defects system (EDS). It is proposed that the conductivity increase is due to defect formation under multiphonon carriers recombination in a part of the EDS enriched by Ga or In atoms. This process is accompanied by a local overheating and migration of Ga or In atoms. To increase the lifetime of the AlGaN/GaN UV LEDs to more than 2000 h it is necessary to improve their nano‐structural and nanoscale AlGaN composition ordering. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Characterization of HVPE‐grown UV LED heterostructures

Cited by 25 publications

References 6 publications

Peculiarities of defect generation under injection current in LEDs based on group‐III nitride³N nanostructures

Peculiarities of defect generation under injection current in LEDs based on group‐III nitride³N nanostructures

Selective photodiodes for ultraviolet based on metal-AlGaN solid solutions

Degradation of external quantum efficiency of AlGaN UV LEDs grown by hydride vapor phase epitaxy

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Characterization of HVPE‐grown UV LED heterostructures

Cited by 25 publications

References 6 publications

Peculiarities of defect generation under injection current in LEDs based on group‐III nitride3N nanostructures

Peculiarities of defect generation under injection current in LEDs based on group‐III nitride3N nanostructures

Selective photodiodes for ultraviolet based on metal-AlGaN solid solutions

Degradation of external quantum efficiency of AlGaN UV LEDs grown by hydride vapor phase epitaxy

Contact Info

Product

Resources

About

Peculiarities of defect generation under injection current in LEDs based on group‐III nitride³N nanostructures

Peculiarities of defect generation under injection current in LEDs based on group‐III nitride³N nanostructures