Peculiarities of defect generation under injection current in LEDs based on group‐III nitride³N nanostructures

Abstract

It has been demonstrated that, along with well‐known mechanisms of defect generation (DG) under injection current in fabricated UV‐ and commercial blue‐LED chips based on A3N nanostructures, other defect generation mechanisms are possible in local regions. Aging experiments performed simultaneously with analysis of evolution of I‐V characteristics at U < 2 V and spectral noise density dependences on current density, revealed DG with participation of multi‐phonon recombination of carriers in an extended defect system and local regions of random alloy fluctuations enriched by metallic atoms (Ga or In). (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Photoelectrochemical Corrosion of GaN/AlGaN-Based p-n Structures

“…Recent investigations of degradation mechanisms for similar HVPE-grown AlGaN/GaN p-n LED structures using multifractal analysis indeed demonstrated the existence of conductive paths (shunts) localized at threading defects (dislocations) (Shmidt et al, 2015). In our structures, the shunts are leakage paths for photocurrier flow that are responsible for non-uniform current spreading, diminishing the gas evolution reaction and decreasing the efficiency of direct water photoelectrolysis.…”

“…Obviously, the photoelectrochemical etching follows paths of the photo-current flow. The current flow paths in III-N GaN/AlGaN or GaN/InGaN materials, especially at low current, are nonuniform and can be associated with shunt conductivity in an extended defect system of grain boundaries, threading dislocations, local regions with irregular alloy composition enriched by metallic atoms (Ga or In) and others extended defects (Shmidt et al, 2015).…”

Investigation of water splitting using III‐N structures

“…Obviously, the photoelectrochemical etching follows paths of the photo‐current flow. The current flow paths in III‐N GaN/AlGaN or GaN/InGaN materials, especially at low current, are non‐uniform and can be associated with shunt conductivity in an extended defect system of grain boundaries, threading dislocations, local regions with irregular alloy composition enriched by metallic atoms (Ga or In), and other extended defects .…”

Effect of Carrier Localization and Shockley-Read-Hall Recombination on the Spatial Distribution of Electroluminescence in InGaN LEDs

“…During the high current aging, highenergy electrons may recombine non-radiatively at original PDs and then release extra energies to motivate the creation of new PDs or to enable original PDs to move [29]. Detailed mechanisms related to the generation of PDs principally include the diffusion of Mg atoms from the p-type layer [30], the formation of nitrogen and gallium vacancies [31], the migration of indium atoms [32], and the intrusion of ambient impurities such as carbon [33].…”