Study of the characteristics of ultraviolet light-emitting diodes based on GaN/AlGaN heterostructures grown by chloride-hydride vapor-phase epitaxy

Соломонов, А. В.; Тарасов, С. А.; Menkovich, E A; Lamkin, I. A.; Kurin, S Yu; Antipov, A.V.; Barash, I. S.; Роенков, А. Д.; Helava, H.; Makarov, Yu.N.

doi:10.1134/s1063782614020262

Cited by 19 publications

(4 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…is a structures with optical pump. Was used optical pump by means of led structure UV-range based on nitrides of gallium-aluminum [12][13][14]. Also works on the creation of structures with an electric pump.…”

Section: Resultsmentioning

confidence: 99%

Light-emitting structures based on colloidal quantum dots of cadmium sulphide having a high color rendering index

Stepanov

Mikhailov

Тарасов

et al. 2016

2016 IEEE NW Russia Young Researchers in Electrical and Electronic Engineering Conference (EIConRusNW)

Self Cite

View full text Add to dashboard Cite

Quantum dots excite interest primarily as luminescent material. Quantum dots of cadmium sulfide created by colloidal synthesis (CQD`s) were investigated. CQD`s such composition allow varying emission peak easily in wide range by changing nanoparticles sizes. Light-emitting structures based on CQD's of cadmium chalcogenides were created. Color rendering index more 90 was obtained. Shows by theoretical modeling possibility to obtain structures with CRI almost 100.

show abstract

Section: Resultsmentioning

confidence: 99%

Light-emitting structures based on colloidal quantum dots of cadmium sulphide having a high color rendering index

Stepanov

Mikhailov

Тарасов

et al. 2016

2016 IEEE NW Russia Young Researchers in Electrical and Electronic Engineering Conference (EIConRusNW)

Self Cite

View full text Add to dashboard Cite

show abstract

“…The main objective of the experiment was to investigate the structural perfection and features of the distribution of impurities in the UY LED heterostructures grown by HYPE [13], and determine their most important operating parameters, including output optical power, the temperature of the active region and efficiency [14,15]. The semiconductor/sapphire interface has the greatest impact, since the radiation passing through the first interface through roughness comes in sapphire layer at small angles to the normal.…”

Section: Resultsmentioning

confidence: 99%

The efficiency of UV LEDs based on GaN/AlGaN heterostructures

Evseenkov

Тарасов

Lamkin

et al. 2015

2015 IEEE NW Russia Young Researchers in Electrical and Electronic Engineering Conference (EIConRusNW)

Self Cite

View full text Add to dashboard Cite

The UV LED heterostructures have been obtained by HVPE approach and investigated by XRD, AFM and PL methods. The experiment shows that the peak wavelength of UV LEDs is in the range of 360-365 nm with FWHM of 10-13 nm. At operating current of 20 rnA the active region temperature Tj is 43°C, the output optical power and efficiency -1.14 mW and 1.46 %, respectively. It is presented a model based on corpuscular Monte Carlo method in order to calculate the light extraction index. The simulation results allow us to propose the ways to increase the efficiency of UV LEDs by 3-4 times: surface interfaces texturing, optimization of the design of heterostructures, and the use of lenses.

show abstract

“…The n-GaN epitaxial layers under study with a thickness of ~10 µm were grown by HVPE at a temperature of 1020--1050ºC on sapphire substrates (Al 2 O 3 ) [6]. The uncompensated donor concentration in as-grown epitaxial layers was determined by the method of capacitance--voltage characteristics with a mercury probe (Fig.…”

Section: Experiments and Discussionmentioning

confidence: 99%

15 eV Protons Irradiation of the GaN Schottky Diodes

Lebedev

Белов

Mynbaeva

et al. 2016

MSF

View full text Add to dashboard Cite

Schottky-barrier diodes with a diameter of ~10 μm are fabricated on n-GaN epitaxial films grown by hydride vapor-phase epitaxy (HVPE) on sapphire substrates. The changes in the parameters of the diodes under irradiation with 15 MeV protons are studied. The carrier rate was found to be 130-145 cm-1. The linear nature of the dependence N = F (D) (N is carrier concentration, and D, the irradiation dose) shows that compensation of the material is associated with transition of electrons from shallow donors to deep acceptor levels which are related to primary radiation defects.

show abstract

Study of the characteristics of ultraviolet light-emitting diodes based on GaN/AlGaN heterostructures grown by chloride-hydride vapor-phase epitaxy

Cited by 19 publications

References 9 publications

Light-emitting structures based on colloidal quantum dots of cadmium sulphide having a high color rendering index

Light-emitting structures based on colloidal quantum dots of cadmium sulphide having a high color rendering index

The efficiency of UV LEDs based on GaN/AlGaN heterostructures

15 eV Protons Irradiation of the GaN Schottky Diodes

Contact Info

Product

Resources

About