Investigation into the processes of atom redistribution encountered during of the formation of metal layers on the surface of aluminum gallium nitride

Lamkin, I. A.; Тарасов, С. А.; Petrov, A. A.; Menkovich, E A; Соломонов, А. В.; Kurin, S Yu

doi:10.1088/1742-6596/572/1/012062

Cited by 7 publications

(3 citation statements)

References 17 publications

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“…The absence of connecting wires reduces the internal resistance of LED. This improves power distribution across the crystal, improves heat dissipation, and improves energy efficiency [26][27][28][29].…”

Section: Resultsmentioning

confidence: 99%

Comparative evaluation of the photosynthetic photonic efficiency of white LEDs

Smirnov

Proshkin

Burynin

et al. 2023

IOP Conf. Ser.: Earth Environ. Sci.

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White LEDs are an effective solution for light culture due to the presence of the green emission spectrum, which has a positive effect on growing plants in the artificial environment. However, the assessment of the effectiveness of the application of the white LEDs for photoculture is complicated by the lack of information in the technical documentation for LEDs about their photosynthetic photon flux in the range of photosynthetically active radiation. In this regard, the purpose was to measure the photonic and energy characteristics of popular white LEDs in various operating modes and to evaluate their photosynthetic photonic efficiency. High-demand brands of LEDs of the rated power of 0.5W in SMD2835 and SMD3030 housing were selected to be studied. The luminous flux of LEDs was measured using a luminous flux meter using the “integrating sphere” method, and then their luminous efficiency and photosynthetic photonic efficiency were calculated. The highest photosynthetic radiation efficiency (more than 2.7 μmol s−1) was registered for LEDs of the color temperature of 4000K and 5000K in the SMD3030 housing, manufactured using flip-chip technology. LEDs of the color temperature of less than 3000K have the lowest photosynthetic photonic efficiency, which is primarily associated with the energy losses in the phosphor and the presence of radiation in the far-red spectrum region, which is not included in the region of photosynthetically active radiation. White LEDs can be used both separately and in combination with the red and blue LEDs, which will allow selecting the spectral composition of the radiation for the specific species and variety of plants.

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Section: Resultsmentioning

confidence: 99%

Comparative evaluation of the photosynthetic photonic efficiency of white LEDs

Smirnov

Proshkin

Burynin

et al. 2023

IOP Conf. Ser.: Earth Environ. Sci.

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“…Structure characteristics were measured using a set-up based on a monochromator MDR-3 with a diffraction grating and a xenon lamp as a light source [10]. The set-up allows measuring spectral characteristics in a range of 200-2500 nm and current-voltage characteristic in a range of 10 -15 А -1 А.…”

Section: Sample and Experemental Techniquementioning

confidence: 99%

Selective photodiodes for ultraviolet based on metal-AlGaN solid solutions

Lamkin

Evseenkov

Aglikov

2016

2016 IEEE NW Russia Young Researchers in Electrical and Electronic Engineering Conference (EIConRusNW)

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The structures based on Ag-AlGaN Schottky barriers have been manufactured. It allowed to realize photodetectors which have a long wavelength edge of photosensitivity less than 350 nm. The half-width was in a range of 15-40 nm depending on the Ag layer thickness varied from 15 to 150 nm. Selective photodetectors based on Au-AlGaN were obtained with the following parameters: half-width of 5-6 nm, 351-373 nm range of photosensitivity with a maximum at 355 nm, 362 nm, 366 nm and a sensitivity to 140 mA/W.

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“…Actually, the Ohmic contact is still one of the key problems in the preparations of high performance AlN-based devices. Preliminary progress has also been made in the study of Ohmic contacts on AlGaN [23,24]. However, little researches were done on AlN.…”

Section: Introductionmentioning

confidence: 99%

Effect of oxygen plasma modification on Pd/Al/Au Ohmic contacts on undoped AlN

Li¹,

Xu²,

Lu³

et al. 2019

J. Phys. D: Appl. Phys.

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The influence of surface modification of undoped AlN by oxygen plasma on the Pd/Al/ Au Ohmic contacts was studied. Pd/Al/Au alloys were deposited on undoped AlN films by electron beam evaporation and annealed from 750 °C to 900 °C for 30 s to form metalsemiconductor contacts. All the samples without oxygen plasma treatment were Schottky contacts. After oxygen plasma treatment, the contacts below annealing temperature of 850 °C were Schottky type. However, the contacts changed to be Ohmic type with specific contact resistivity of 3.01 Ω • cm 2 when the annealing temperature was 900 °C. The samples were characterized by scanning electron microscopy and x-ray diffraction, which indicated that the formation of AlPd alloy was believed to play a key role for the formation of low Ohmic contacts. The first-principle calculation indicated that the surface modification by oxygen plasma could increase the work function of AlN and therefore benefit the formation of Ohmic contacts. This result can promote the application prospects of AlN in deep ultraviolet optoelectronic devices and high frequency and high power RF devices.

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Investigation into the processes of atom redistribution encountered during of the formation of metal layers on the surface of aluminum gallium nitride

Cited by 7 publications

References 17 publications

Comparative evaluation of the photosynthetic photonic efficiency of white LEDs

Comparative evaluation of the photosynthetic photonic efficiency of white LEDs

Selective photodiodes for ultraviolet based on metal-AlGaN solid solutions

Effect of oxygen plasma modification on Pd/Al/Au Ohmic contacts on undoped AlN

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