This paper reviews some of the problems limiting broad manufacturing implementation of chemical mechanical polishing (CMP) as a planarization process for interlevel dielectrics. We examine the mechanism whereby polish rates tend to decrease as the polish pad ages, and propose an explanation based on slurry transport. We review a simple theory which provides an understanding in terms of basic mechanical principles of how CMP produces its planarizing effect. Finally, we demonstrate a method capable of providing a quantitative measure of planarity.
Chemical Mechanical Polishing (CMP) is becoming a mainstream technology for the planarization of dielectrics at various process levels. Widely different types of glass films are now routinely processed using CMP techniques. In this work, the polish rates using an aqueous silica based slurry for thermally grown Si02, plasma deposited SiC2, and boro-phospho-silicate glasses have been compared. A polishing mechanism based on the concentration of water in the glass is proposed. It is also shown that the presence of phosphorous changes the polishing mechanism compared to undoped glasses and the rate increase due to phosphorous is much greater than that due to boron.
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