&lt;title&gt;Polishing characteristics of different glass films&lt;/title&gt;

Tolles, Robert; Bath, Hubert; Doris, B.; Jairath, Rahul; Leggett, R.D.; Sivaram, Siva

doi:10.1117/12.145480

Cited by 4 publications

(2 citation statements)

References 1 publication

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“…However, with the local planarization only sharp corners are smoothed while the surface level across the wafer due to the substrate topography remains essentially unchanged. The global planarization, including chemical mechanical polishing (CMP) and plasma planarization, provides possibilities of a completely planarized surface across the wafer [6], [11,12].…”

Section: Planarizationmentioning

confidence: 99%

Robust micromachining of compliant mechanisms using silicides

Khosraviani¹,

Leung²

2012

J. Micromech. Microeng.

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We introduce an innovative sacrificial surface micromachining process that enhances the mechanical robustness of freestanding microstructures and compliant mechanisms. This process facilitates the fabrication, and improves the assembly yield of the out-of-plane micro sensors and actuators. Fabrication of a compliant mechanism using conventional sacrificial surface micromachining results in a non-planar structure with a step between the structure and its anchor. During mechanism actuation or assembly, stress accumulation at the structure step can easily exceed the yield strength of the material and lead to the structure failure. Our process overcomes this topographic issue by virtually eliminating the step between the structure and its anchor, and achieves planarization without using chemical mechanical polishing. The process is based on low temperature and post-CMOS compatible nickel silicide technology. We use a layer of amorphous silicon (a-Si) as a sacrificial layer, which is locally converted to nickel silicide to form the anchors. High etch selectivity between silicon and nickel silicide in the xenon difluoride gas (sacrificial layer etchant) enables us to use the silicide to anchor the structures to the substrate. The formed silicide has the same thickness as the sacrificial layer; therefore, the structure is virtually flat. The maximum measured step between the anchor and the sacrificial layer is about 10 nm on a 300 nm thick sacrificial layer.

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Section: Planarizationmentioning

confidence: 99%

Robust micromachining of compliant mechanisms using silicides

Khosraviani¹,

Leung²

2012

J. Micromech. Microeng.

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“…Full wafer planarization has been done successfully by chemical mechanical polishing (CMP) 8,9 . However the aspect ratio of the features being planarized is typically small, in many cases with a ratio on the order of 1:1.…”

Section: Introductionmentioning

confidence: 99%

Planarization of high aspect ratio p-i-n diode pillar arrays for blanket electrical contacts

Voss

Shao

Reinhardt

et al. 2010

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Two planarization techniques for high aspect ratio three dimensional pillar structured P-I-N diodes have been developed in order to enable a continuous coating of metal on the top of the structures. The first technique allows for coating of structures with topography through the use of a planarizing photoresist followed by RIE etch back to expose the tops of the pillar structure. The second technique also utilizes photoresist, but instead allows for planarization of a structure in which the pillars are filled and coated with a conformal coating by matching the etch rate of the photoresist to the underlying layers. These techniques enable deposition using either sputtering or electron beam evaporation of metal films to allow for electrical contact to the tops of the underlying pillar structure. These processes have potential applications for many devices comprised of 3-D high aspect ratio structures.

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Plasma planarization for sensor applications

French

Wolffenbuttel

1995

J. Microelectromech. Syst.

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Abstract-Filling trenches in silicon using phosphosilicate glass (PSG) provides many possibilities for novel device structures for sensors and actuators. This paper describes a plasma planarization technique that provides fully planarized PSG filled silicon trenches for sensor applications. The technique consists of planarizing the substrate using two photoresist layers and plasma etching-back. The lower resist layer is the A25214 image reversal resist, which is patterned and then thermally cured. The upper resist layer is a global HPR204 coating. The plasma etching-back is carried out using C H F~/ C Z F~ gas mixture with an 0 2 addition. It is shown that by using the image reversal photoresist approach, fully planarized surface coating can be obtained without resorting to an additional mask. By adding 25 sccm (14%) 0 2 into the 137 sccm CHF3 +18 sccm C2F6 gas mixture, the etch rates for the photoresist and PSG can be matched. Process optimization for the two layer resist coating and plasma etching is discussed. [140]

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<title>Polishing characteristics of different glass films</title>

Cited by 4 publications

References 1 publication

Robust micromachining of compliant mechanisms using silicides

Robust micromachining of compliant mechanisms using silicides

Planarization of high aspect ratio p-i-n diode pillar arrays for blanket electrical contacts

Plasma planarization for sensor applications

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