Measurement of surface recombination velocity in silicon by steady-state photoconductance

Bath, Hubert; Cutler, M.

doi:10.1016/0022-3697(58)90066-0

Cited by 9 publications

(3 citation statements)

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“…In general, the injection ratio depends on the applied bias and the energy of the Schottky barrier. Under forward bias, Υ rises with the forward current. , Using practical values of v s,n and v s,p for Si, our method reproduces an uprising trend for Υ with respect to the total current as illustrated by the blue and red curves in Figure d. Importantly, if one gradually reduces v s,p (while maintaining v s,n at a fixed value), the contact should become more “electron-selective”, resulting in a reduced injection ratio with increasing bias (or current flow).…”

Section: Resultsmentioning

confidence: 71%

“…From Figure a, we can see that the metal–Si junction forms a Schottky contact with a barrier height of ∼0.45 eV. To model the electron and hole transport across this junction, we have assumed initial interfacial transfer velocities of v s,n = 10 5 m s –1 and v s,p = 10 4 m s –1 , typical for Si . Importantly, this equilibration process (unbiased) physically represents zero net electron (majority) transfer via the conduction band, as well as zero net hole (minority) transfer via the valence band, which is formally defined by both eqs and falling to zero.…”

Section: Resultsmentioning

confidence: 99%

“…To model the electron and hole transport across this junction, we have assumed initial interfacial transfer velocities of v s,n = 10 5 m s −1 and v s,p = 10 4 m s −1 , typical for Si. 61 Importantly, this equilibration process (unbiased) physically represents zero net electron (majority) transfer via the conduction band, as well as zero net hole (minority) transfer via the valence band, which is formally defined by both eqs 1 and 2 falling to zero. However, even for MS Schottky junctions, the process of the interfacial charge transfer becomes rather complicated when the junction is biased from V = 0 to |V| > 0, which we will explore next.…”

Section: Resultsmentioning

confidence: 99%

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Simultaneously Solving the Photovoltage and Photocurrent at Semiconductor–Liquid Interfaces

Iqbal

Bevan

2017

J. Phys. Chem. C

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In this work, we present a general theoretical and numerical approach for simultaneously solving the photovoltage and photocurrent at semiconductor−liquid interfaces. Our methodology extends drift-diffusion methods developed for metal−semiconductor Schottky contacts in the device physics community into the domain of semiconductor− liquid "pseudo-Schottky" contacts. This model is applied to the study of photoelectrochemical anodes, utilized in the oxidative splitting of water. To capture both the photovoltage and photocurrent at semiconductor−liquid interfaces, we show that it is necessary to solve both the electron and hole current continuity equations simultaneously. The electron continuity equation is needed to primarily capture the photovoltage formation at photoanodes, whereas the hole continuity equation must be solved to obtain the photocurrent. Both continuity equations are solved through coupled recombination and generation terms. Moreover, to capture charge transfer at the semiconductor−liquid interface, floating (Neumann) boundary conditions are applied to the electron and hole continuity equations. As a model system, we have studied the illuminated hematite photoanode, where it is shown that our approach can capture band flattening during the formation of a photovoltage, as well as the photocurrent onset and saturation. Finally, the utility of this methodology is demonstrated by correlating our theoretical calculations with photocurrent measurements reported in the literature. In general, this work is intended to expand the scope of photocatalytic device design tools and thereby aid the optimization of solar fuel generation.

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Section: Resultsmentioning

confidence: 71%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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