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1957
DOI: 10.1109/jrproc.1957.278254
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Surface Leakage Current in Silicon Fused Junction Diodes

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1963
1963
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Cited by 28 publications
(1 citation statement)
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“…The effectof n-type channels on the reverse current in germanium p-n junction diodes has been studied by McWhorter and Kingston," Surface leakage currents have also been observed in silicon junction diodes by Cutler and Bath. 5 Garrett and Brattain have shown that the surface can even control the break- down voltage in n-p-n transistors," Recently, Sah 7 has shown that the current gain oftransistors can be controlled by means of the surface. In the case of the insulated gate field-effect transistor.…”
mentioning
confidence: 99%
“…The effectof n-type channels on the reverse current in germanium p-n junction diodes has been studied by McWhorter and Kingston," Surface leakage currents have also been observed in silicon junction diodes by Cutler and Bath. 5 Garrett and Brattain have shown that the surface can even control the break- down voltage in n-p-n transistors," Recently, Sah 7 has shown that the current gain oftransistors can be controlled by means of the surface. In the case of the insulated gate field-effect transistor.…”
mentioning
confidence: 99%