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A physics-based analytic model with no fitting parameters is introduced for the AlGaN/GaN HFET. For unsaturated operation, non-linear analytic models for the I-V characteristics in the two access regions and beneath the gate are developed. The resulting equations are linked together by voltage and current continuity at the boundaries. Good agreement between the model and corresponding simulations with ATLAS, a commercial simulator, is demonstrated. In addition, the proposed model is shown to compare favorably with popular curve-fitting models of HFET operation.

The commutation failure (CF) mitigation effectiveness is normally restricted by the delay of extinction angle (EA) measurement or the errors of existing prediction methods for EA or firing angle (FA). For this purpose, this paper proposes a CF mitigation method based on the imaginary commutation process. For each sample point, an imaginary commutation process is constructed to simulate the actual commutation process. Then, the imaginary EA is calculated by comparing the imaginary supply voltage-time area and the imaginary demand voltage-time area, which can update the imaginary EA earlier than the measured EA. In addition, the proposed method considers the impacts of commutation voltage variation, DC current variation, and phase angle shift of commutation voltage on the commutation process, which can ensure a more accurate EA calculation. Moreover, the DC current prediction is proposed to improve the CF mitigation performance under the single-phase AC faults. Finally, the simulation results based on CIGRE model prove that the proposed method has a good performance in CF mitigation.

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