A new physics-based compact model for AlGaN/GaN HFETs

Yin, Hong; Bilbro, Griff L.; Trew, R.J.

doi:10.1109/mwsym.2007.380058

Cited by 15 publications

(8 citation statements)

References 2 publications

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“…Initially applied to GaAs-based devices, the application of these modeling concepts has now become a major focus in the development of nonlinear large-signal RF GaN HFET models. In recent years, many empirical and compact physical models have been reported, aimed at predicting the performance of the GaN HFET devices [12]- [21]. Most of these models again rely on P-I -V measurements as a model extraction and validation tool when including the trapping effects.…”

Section: Evaluation Of Pulsed I-v Analysis Asmentioning

confidence: 99%

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Evaluation of Pulsed I–V Analysis as Validation Tool of Nonlinear RF Models of GaN-Based HFETs

Hirshy

Singh

Casbon

et al. 2018

IEEE Trans. Electron Devices

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This paper evaluates the applicability of pulsed I-V measurements as a tool for accurately extracting nonlinear gallium nitride (GaN)-based heterojunction fieldeffect transistor (HFET) models. Two wafers with the identical layer structure but different growth conditions have been investigated. A series of I-V measurements was performed under dc and pulsed conditions demonstrating a dramatic difference in the kink effect and current collapse (knee walkout) suggesting different trapping behaviors. However, when radio frequency (RF) I-V waveform measurements, utilizing active harmonic load-pull, were used to study the impact of these traps on the RF performance, both wafers gave good overall RF performance with no significant difference observed. This absence of correlation between pulsed I-V measurement results and RF performance raises a question about the applicability of pulsed I-V measurements alone as a tool for extracting nonlinear device models in the case of GaN HFETs. Index Terms-Active harmonic load-pull, current collapse, gallium nitride (GaN), heterojunction field-effect transistor (HFET), high-electron mobility transistor, kink effect, knee walkout, pulsed I-V, trapping effect. I. INTRODUCTION D UE to the unique material properties of gallium nitride (GaN), particularly high-electron mobility, high break

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Section: Evaluation Of Pulsed I-v Analysis Asmentioning

confidence: 99%

“…If the P-I -V data of Fig. 3 were used to extract the model coefficients for use in a nonlinear model modified to account for trapping [12]- [21], two different models would be generated, and the predicted RF performance of the wafers Fig. 3.…”

Section: A Pulsed I-vmentioning

confidence: 99%

Evaluation of Pulsed I–V Analysis as Validation Tool of Nonlinear RF Models of GaN-Based HFETs

Hirshy

Singh

Casbon

et al. 2018

IEEE Trans. Electron Devices

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“…13,14 The Schottky current would decrease because the electric fields at the gate edge are reduced by the negative interface charges. The hysteresis observed in Figs.…”

Section: Measurementsmentioning

confidence: 99%

A semi-analytical, two-dimensional model for AlGaN/GaN high-electron-mobility-transistor Schottky currents at high reverse voltages

Jos

2013

Journal of Applied Physics

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“…The pinch-off voltage, V p , is defined based on [21], as shown in Fig. 5(b): In this way, it is easy to relate the model parameters to the physical parameters in this model.…”

Section: Modelmentioning

confidence: 99%

Semi-physical nonlinear circuit model with device/physical parameters for HEMTs

Otsuka

Oishi

Yamanaka

et al. 2011

Int. j. microw. wirel. technol.

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A nonlinear circuit model (NCM) with physical parameters is proposed for direct simulation of the RF characteristics of GaN high-electron-mobility transistors (GaN HEMTs) on the basis of device structure. The physical equations are used for the construction of the model in order to connect strongly the model parameters with the device/physical parameters. Hyperbolic tangent functions are used as the model equations to ensure good model convergence and rapid simulation (short simulation time). The usefulness of these equations is confirmed by technology computer aided design (TCAD) simulation. The number of model parameters for the nonlinear components (Ids, Cgs, Cgd) is reduced to 17 by using common physical parameters for modeling the drain current and capacitance. The accuracy of this model is verified by applying to GaN HEMTs. The modeled I–V and capacitance characteristics agree well with the measurement data over a wide voltage range. Furthermore, this model can be used for the accurate evaluation of S-parameters and large-signal RF characteristics.

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A new physics-based compact model for AlGaN/GaN HFETs

Cited by 15 publications

References 2 publications

Evaluation of Pulsed I–V Analysis as Validation Tool of Nonlinear RF Models of GaN-Based HFETs

Evaluation of Pulsed I–V Analysis as Validation Tool of Nonlinear RF Models of GaN-Based HFETs

A semi-analytical, two-dimensional model for AlGaN/GaN high-electron-mobility-transistor Schottky currents at high reverse voltages

Semi-physical nonlinear circuit model with device/physical parameters for HEMTs

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